Publications

Affichage de 10071 à 10080 sur 16098


  • Communication dans un congrès

Digital compensation of the power amplifier nonlinearities at relay station receivers in 802.16j very high data rate systems

J. Zeleny, P. Rosson, C. Dehos, A. Kaiser

IEEE Radio and Wireless Symposium, RWS 2010, 2010, United States. pp.244-247, ⟨10.1109/RWS.2010.5434157⟩. ⟨hal-00549975⟩

  • Article dans une revue

Interface structure of silicon nanocrystals embedded in an amorphous silica matrix

R. Soulairol, F. Cleri

Solid State Sciences, 2010, 12, pp.163-171. ⟨10.1016/j.solidstatesciences.2009.05.004⟩. ⟨hal-00549076⟩

  • Article dans une revue

Graphene on metallic substrates : suppression of the Kohn anomalies in the phonon dispersion

A. Allard, L. Wirtz

Nano Letters, 2010, 10, pp.4335-4340. ⟨10.1021/nl101657v⟩. ⟨hal-00549079⟩

  • Communication dans un congrès

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

  • Communication dans un congrès

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

  • Communication dans un congrès

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

  • Article dans une revue

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·…

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩

  • Communication dans un congrès

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩