Publications
Affichage de 10101 à 10110 sur 16378
Bubble splitting in oscillatory flows on ground and in reduced gravity
Harunori Yoshikawa, Farzam Zoueshtiagh, Hervé Caps, Pascal Kurowski, Philippe Petitjeans
European Physical Journal E: Soft matter and biological physics, 2010, 31, pp.191-199. ⟨10.1140/epje/i2010-10561-y⟩. ⟨hal-00907768⟩
Engineering sticky superomniphobic surfaces on transparent and flexible PDMS substrate
Renaud Dufour, Maxime Harnois, Yannick Coffinier, Vincent Thomy, Rabah Boukherroub, Vincent Senez
Langmuir, 2010, 26 (22), pp.17242-17247. ⟨10.1021/la103462z⟩. ⟨hal-00549492⟩
Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications
J. Ratajczak, A. Laszcz, A. Czerwinski, J. Katcki, F. Phillipp, P.A. van Aken, N. Reckinger, Emmanuel Dubois
Journal of Microscopy, 2010, EM 2008 ‐ XIII International Conference on Electron Microscopy, 237 (3), pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩. ⟨hal-00549623⟩
Fabrication of 24-MHz-disk resonators with silicon passive integration technology
M. Sworowski, F. Neuilly, Bernard Legrand, A. Summanwar, P. Philippe, L. Buchaillot
IEEE Electron Device Letters, 2010, 31, pp.23-25. ⟨10.1109/LED.2009.2034542⟩. ⟨hal-00548984⟩
Negative refraction of surface acoustic waves in the subgigahertz range
Bernard Bonello, Laurent Belliard, Juliette Pierre, Jerome O. Vasseur, Bernard Perrin, Olga Boyko-Kazymyrenko
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.104109-1-5. ⟨10.1103/PhysRevB.82.104109⟩. ⟨hal-00549435⟩
Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
O. Fathallah, M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref
European Physical Journal: Applied Physics, 2010, 51, pp.10304-1-5. ⟨10.1051/epjap/2010085⟩. ⟨hal-00549476⟩
Imperfection-sensitive ductility of aluminium thin films
M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen
Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩
A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI
A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent
IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩
Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson
Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩
Gold-free growth of GaAs nanowires on silicon : arrays and polytypism
S.R. Plissard, K. A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff
Nanotechnology, 2010, 21, pp.385602-1-8. ⟨10.1088/0957-4484/21/38/385602⟩. ⟨hal-00548717⟩