Publications

• Article dans une revue

An adaptive systematic lossy error protection scheme for broadcast applications based on frequency filtering and unequal picture protection

M. Ramon, François-Xavier Coudoux, Marc G. Gazalet

Systematic lossy error protection (SLEP) is a robust error resilient mechanism based on principles of Wyner-Ziv (WZ) coding for video transmission over error-prone networks. In an SLEP scheme, the video bitstream is separated into two parts: a systematic part consisting of a video sequence…

International Journal of Digital Multimedia Broadcasting, 2009, 2009, pp.709813. ⟨10.1155/2009/709813⟩. ⟨hal-00471829⟩

• Article dans une revue

Franck-Condon blockade in suspended carbon nanotube quantum dots

R. Leturcq, C. Stampfer, K. Inderbitzin, L. Durrer, C. Hierold, E. Mariani, M.G. Schultz, F. von Oppen, K. Ensslin

Nature Physics, 2009, 5, pp.327-331. ⟨10.1038/nphys1234⟩. ⟨hal-00473093⟩

• Communication dans un congrès

Mesures de bruit en gamme millimétrique : limitations et solutions

N. Waldhoff, C. Andrei, F. Gianesello, D. Gloria, Francois Danneville, Gilles Dambrine

16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.2D-3, 1-4. ⟨hal-00480318⟩

• Communication dans un congrès

Millimeter-wave patch array antenna on ultra flexible micromachined polydimethylsiloxane (PDMS) substrate

S. Hage-Ali, Nicolas Tiercelin, P. Coquet, R. Sauleau, Vladimir Preobrazhensky

IEEE International Symposium on Antennas and Propagation, 2009, Charleston, United States. pp.1-4, ⟨10.1109/APS.2009.5171486⟩. ⟨hal-00474086⟩

• Article dans une revue

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, Ali Soltani, M. Mattalah, M. Moreau, P. Thevenin, Jean-Claude de Jaeger

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an…

Diamond and Related Materials, 2009, 18, pp.1039 - 1042. ⟨10.1016/j.diamond.2009.02.018⟩. ⟨hal-00435395⟩

• Article dans une revue

Preparation and multi-characterization of plasma polymerized allylamine films

Abdennour Abbas, Céline Vivien, Bertrand Bocquet, Didier Guillochon, Philippe Supiot

Plasma polymerized allylamine (ppAA) films were deposited in a radio-frequency glow discharge plasma reactor using a continuous-wave mode and varying the discharge power from 15 to 125 W. The deposition rate reached 26 nm · min−1 and was constant within at least half an hour of process. The…

Plasma Processes and Polymers, 2009, 6, pp.593-604. ⟨10.1002/ppap.200900016⟩. ⟨hal-00471822⟩

• Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩

• Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

• Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

• Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩