Publications
Affichage de 10471 à 10480 sur 16182
A multi-hop UWB radio over polymer fibre system for 60-GHz hybrid networks
C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, N. Rolland
European Workshop on Photonic Solutions for Wireless, Access and in-house Networks, 2009, Duisburg, Germany. ⟨hal-00574838⟩
Impact of the gate layout on the performance of RF power nLDMOSFETs integrated in a 0.13-µm CMOS technology
D. Fournier, D. Ducatteau, E. Delos, M. Buczko, P. Scheer, D. Gloria, Christophe Gaquière, P. Chevalier
IEEE Topical Symposium on Power Amplifiers for Wireless Communications, PASymposium, 2009, San Diego, CA, United States. ⟨hal-00575454⟩
Complete optical characterization of multilayered InxGa1-xN/GaN structures grown by MOCVD on sapphire substrates
A. Gokarna, A. Stolz, El Hadj Dogheche, Didier Decoster, J. Teng, W. Liu, S.J. Chua, E. Dumont
5th International Conference for Materials Advanced Technologies, ICMAT 2009, Symposium O: Compound Semiconductor Photonics: Materials, Devices and Integration, 2009, _, France. ⟨hal-00575300⟩
A new miniaturized patch antenna for wireless systems : GSM, UMTS, HIPERLAN
M. Ben Ahmed, F. El Ouaai, M. Bouhorma, A. Mamouni
5th IEEE International Conference on Wireless and Mobile Computing, Networking and Communications, WiMob 2009, 2009, Morocco. pp.191-195, ⟨10.1109/WiMob.2009.40⟩. ⟨hal-00573173⟩
Impact of carrier frequency offsets on Block-IFDMA systems
E.P. Simon, Virginie Degardin, M. Lienard
EURASIP Journal on Wireless Communications and Networking, 2009, 2009, pp.483128. ⟨10.1155/2009/483128⟩. ⟨hal-00473688⟩
AlN on nanocrystalline diamond piezoelectric cantilevers for sensors/actuators
V. Mortet, A. Soltani, Abdelkrim Talbi, P. Pobedinskas, K. Haenen, Jean-Claude de Jaeger, Philippe Pernod, P. Wagner
Eurosensors XXIII, Sep 2009, Lausanne, Switzerland. pp.40-43, ⟨10.1016/j.proche.2009.07.010⟩. ⟨hal-00474464⟩
Physical analysis of thermal effects on the optimization of GaN Gunn diodes
Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger
Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn
IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs
A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski
Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩