Publications

Affichage de 10511 à 10520 sur 16440


  • Article dans une revue

Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri

Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩

  • Article dans une revue

Enhanced high data rate communication system using embedded cooperative radar for intelligent transports systems

Yassin El Hillali, C. Tatkeu, P. Deloof, Laila Sakkila, Atika Rivenq, Jean-Michel Rouvaen

Transportation Research Part C: Emerging Technologies, 2010, 18, pp.429-439. ⟨10.1016/j.trc.2009.05.013⟩. ⟨hal-00549912⟩

  • Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

  • Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩

  • Communication dans un congrès

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valusis, K. Madjour, Didier Theron, Christophe Gaquière, M.-A. Poisson

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are…

15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA, Jun 2009, Lithuania. pp.2855-2857, ⟨10.1002/PSSC.200982532⟩. ⟨hal-00545979⟩