Publications
Affichage de 10621 à 10630 sur 16175
Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method
J.N. Gillet, J.Y. Degorce, M. Meunier
Semiconductor Science and Technology, 2009, 24, pp.095010-1-11. ⟨10.1088/0268-1242/24/9/095010⟩. ⟨hal-00473096⟩
Physical analysis of thermal effects on the optimization of GaN Gunn diodes
Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger
Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn
IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs
A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski
Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩
Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model
T. Sadi, Jean-Luc Thobel
Journal of Physics: Conference Series, 2009, 193, pp.012017-1-4. ⟨10.1088/1742-6596/193/1/012017⟩. ⟨hal-00473657⟩
High-frequency susceptibility in giant magnetostrictive TbCo2/FeCo multilayers under SRT, induced by an external magnetic field
A. Klimov, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Y. Ignatov, S. Nikitov
26th Progress in Electromagnetics Research Symposium, PIERS 2009, 2009, Moscow, Russia. ⟨hal-00810519⟩
Modeling of silicon nanowire growth : shaping, doping, and self-arrangement
A. Klimovskaya, A. Efremov, D. Hourlier
IVth Ukrainian Scientific Conference on Physics of Semiconductors, USCPS-4, 2009, Zaporizhzhya, Ukraine. ⟨hal-00810513⟩
Characterization of nano-crystalline diamond films grown by continuous DC bias during plasma enhanced chemical vapor deposition
V. Mortet, L. Zhang, M. Eckert, A. Soltani, J. d'Haen, O. Douheret, M. Moreau, S. Osswald, E. Neyts, David Troadec, P. Wagner, A. Bogaerts, G. van Tendeloo, K. Haenen
Materials Research Society Fall Meeting, MRS Fall 2009, Symposium J : Diamond electronics and bioelectronics - Fundamentals to applications III, 2009, Boston, MA, United States. pp.1203-J05-03, 41-46, ⟨10.1557/PROC-1203-J05-03⟩. ⟨hal-00800940⟩
Phase conjugation of ultrasonic wave propagated in air
P.N. Shirkovsky, Y.V. Pylnov
International Conference on Fundamental Problems in Radio-Engineering, 2009, Moscow, Russia. pp.58-61(rus). ⟨hal-00800930⟩