Publications

• Article dans une revue

Mie resonance-based dielectric metamaterials

Q. Zhao, J. Zhou, F. Zhang, D. Lippens

Increasing attention on metamaterials has been paid due to their exciting physical behaviors and potential applications. While most of such artificial material structures developed so far are based on metallic resonant structures, Mie resonances of dielectric particles open a simpler and more…

Materials Today, 2009, 12, pp.60-69. ⟨10.1016/S1369-7021(09)70318-9⟩. ⟨hal-00471883⟩

• Communication dans un congrès

Vortices and ferroelectric switching dynamics

Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Baudry, Laurent Lahoche

2nd International Meeting on Materials for Electronic Applications, IMMEA 2009, 2009, Hammamet, Tunisia. ⟨hal-00575711⟩

• Article dans une revue

Experimental study on sound and damaged mortar: Variation of ultrasonic parameters with porosity

Zoubeir Lafhaj, Marc Goueygou

The relationship between porosity and ultrasonic parameters of mortar was studied. In order to enhance the sensitivity of the ultrasonic wave to microstructural changes, a high frequency range, 0.6–1.2 MHz, was chosen. The material investigated consists of four mortar mixtures with water/cement…

Construction and Building Materials, 2009, 23 (2), pp.953-958. ⟨10.1016/j.conbuildmat.2008.05.012⟩. ⟨hal-00354607⟩

• Article dans une revue

Electrochemical impedance spectroscopy of ZnO nanostructures

Hong Liu, G. Piret, B. Sieber, J. Laureyns, P. Roussel, Wei-Jiang Xu, Rabah Boukherroub, Sabine Szunerits

The paper reports on the use of electrochemical impedance spectroscopy to determine the doping character and carrier density of freshly prepared and annealed ZnO nanostructures. The ZnO nanostructures were obtained by chemical oxidation of metallic Zn in a 5% N,N-dimethylformamide (DMF) aqueous…

Electrochemistry Communications, 2009, 11, pp.945-949. ⟨10.1016/j.elecom.2009.02.019⟩. ⟨hal-00383697⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• Article dans une revue

A reduction modeling method to assess the electromagnetic emission of multiconductor transmission lines

Guillaume Andrieu, X. Bunlon, J.P. Parmantier, Alain Reineix, L. Kone, B. Demoulin

Comptes Rendus. Physique, 2009, 10, pp.83-90. ⟨10.1016/j.crhy.2008.12.002⟩. ⟨hal-00473697⟩

• Article dans une revue

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩

• Article dans une revue

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩

• Article dans une revue

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

L.H. Yang, G.S. Wang, C.L. Mao, Y.Y. Zhang, R.H. Liang, Caroline Soyer, Denis Remiens, X.L. Dong

Journal of Crystal Growth, 2009, 311, pp.4241-4246. ⟨10.1016/j.jcrysgro.2009.05.025⟩. ⟨hal-00473732⟩

• Communication dans un congrès

AlGaN/GaN/Si HEMT's and capacitance deep level transient spectroscopy (DLTS)

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Christophe Gaquière, H. Maaref

2nd International Meeting on Materials for Electronic Applications, IMMEA 2009, 2009, Hammamet, Tunisia. ⟨hal-00575416⟩