Publications

Affichage de 10801 à 10810 sur 16064


  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Article dans une revue

Parallel interference cancellation in DS-CDMA optical networks using bias compensation

A. Okassa M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, Y. Zouine

European Transactions on Telecommunications, 2009, 20, pp.564-571. ⟨10.1002/ett.1358⟩. ⟨hal-00471835⟩

  • Article dans une revue

Ultra-sensitive capacitive detection based on SGMOSFET compatible with front-end CMOS process

E. Colinet, C. Durand, L. Duraffourg, P. Audebert, G. Dumas, F. Casset, E. Ollier, P. Ancey, J.F. Carpentier, L. Buchaillot, A.M. Ionescu

IEEE Journal of Solid-State Circuits, 2009, 44, pp.247-257. ⟨10.1109/JSSC.2008.2007448⟩. ⟨hal-00472755⟩

  • Communication dans un congrès

SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in mmW range 60-110 GHz

Y. Tagro, D. Gloria, S. Boret, Sylvie Lepilliet, Gilles Dambrine

IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, 2009, Capri, Italy. pp.83-86, ⟨10.1109/BIPOL.2009.5314138⟩. ⟨hal-00800905⟩

  • Communication dans un congrès

Metallic source/drain for advanced MOS architectures : from material engineering to device integration

Emmanuel Dubois, G. Larrieu, N. Breil, R. Valentin, Francois Danneville, Dmitri Yarekha, N. Reckinger, Xing Tang, A. Halimaoui, R. Rengel, E. Pascual, A. Pouydebasque, X. Wallart, S. Godey, J. Ratajczak, A. Laszcz, J. Katcki, J.P. Raskin, Gilles Dambrine, A. Cros, T. Skotnicki

SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece. ⟨hal-00575267⟩

  • Communication dans un congrès

Millimeter-wave frequency generation with dual-wavelength DFB laser

S. Ginestar, F. van Dijk, A. Accard, O. Legouezigou, F. Poingt, F. Pommereau, L. Legouezigou, F. Lelarge, B. Rousseau, J. Landreau, Jean-Pierre Vilcot, G.H. Duan

European Workshop on Photonic Solutions for Wireless, Access and in-house Networks, 2009, Duisburg, Germany. ⟨hal-00575293⟩

  • Communication dans un congrès

Modulation gigahertz sur porteuse térahertz accordable générée par photomélange aux longueurs d'ondes télécoms

Matthieu Martin, Juliette Mangeney, Paul Crozat, Yannick Chassagneux, Raffaele Colombelli, Laurent Vivien, Karine Blary, Jean-Francois Lampin

Horizons de l'Optique, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575451⟩

  • Communication dans un congrès

Synthèse et propriétés électriques de la jonction moléculaire Si/SiO2/σ-C60-σ/Hg

David Guérin, S. Lenfant, D. Vuillaume

Colloque Matériaux et Nanostrutures π-conjugés, MNPC09, 2009, Arcachon, France. ⟨hal-00575266⟩

  • Chapitre d'ouvrage

Metal-semiconductor-metal photodiodes

Joseph Harari, V. Magnin

Decoster D., Harari J. Optoelectronic sensors, ISTE-Wiley, Chapter 5, 155-178, 2009. ⟨hal-00575793⟩