Publications
Affichage de 10821 à 10830 sur 16378
Compact and highly selective right/left-handed loaded coplanar waveguide lines
Alejandro Borja, Jorge Carbonell, Vicente Boria, Didier Lippens
39th European Microwave Conference, EuMC 2009, Sep 2009, Rome, Italy. pp.1287-1290, ⟨10.1109/EUMC.2009.5296259⟩. ⟨hal-00474416⟩
Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator
T. Sadi, Jean-Luc Thobel
Journal of Applied Physics, 2009, 106 (8), pp.083709. ⟨10.1063/1.3248358⟩. ⟨hal-00473654⟩
Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
I. Saidi, M. Gassoumi, H. Maaref, H. Mejri, Christophe Gaquière
Journal of Applied Physics, 2009, 106, pp.054511-1-7. ⟨10.1063/1.3202317⟩. ⟨hal-00473632⟩
Contribution à la résolution de problèmes de compatibilité électromagnétique par le formalisme des circuits électriques de KRON
Samuel Leman
2009. ⟨hal-00573111⟩
Complex permittivity and tunable performance of BST thin film up to 60 GHz
Jean-François Legier, T. Lasri, Erick Paleczny, Denis Remiens, Caroline Soyer, Freddy Ponchel, J. Midy, G. Guegan
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00575713⟩
Growth and electrical properties of MPB BiScO3-PbTiO3 thin films
S. Zhang, X. Dong, Y. Zhang, F. Cao, Gang Wang, N. Sama, Denis Remiens
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00575746⟩
Non-destructive characterization of ceramic aeronautic bearing balls using resonant ultrasound spectroscopy
F. Deneuville, Mohammadi Ouaftouh, Marc Duquennoy, Frédéric Jenot, Mohamed Ourak, S. Desvaux
International Symposium on Technological Innovation & Transport Systems, ITT'09, 2009, Paris, France. ⟨hal-00575754⟩
Optical properties of gallium nitride epitaxial layers deposited on a novel low temperature buffer layer - Application to waveguide applications
A. Stolz, E. Cho, El Hadj Dogheche, D. Pavlidis, Didier Decoster
28èmes Journées Nationales d'Optique Guidée, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575297⟩
Carbon and nanowires based devices for high frequencey and low power applications
H. Happy, L. Nougaret, N. Meng, Gilles Dambrine, S. Bollaert, D. Hourlier, P. Caroff, D. Vignaud
Sino-French Workshop, 2009, Shanghai, China. ⟨hal-00574847⟩
Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
J. Johansson, P. Caroff, K.A. Dick, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson
Materials Research Society Fall Meeting, MRS Fall 2009, 2009, Boston, MA, United States. ⟨hal-00574854⟩