Publications

• Brevet

Semiconductor device

S. Pruvost, F. Gianesello

France, Patent n° : US2008079170 (A1). 2008. ⟨hal-00372082⟩

• Communication dans un congrès

Permittivité complexe du ferroélectrique BaSrTiO3 aux longueurs d'ondes millimétriques

Gregory Houzet, Ludovic Burgnies, Sylvie Lepilliet, Gabriel Vélu, Karine Blary, Jean-Claude Carru, Didier Lippens

10èmes Journées de Caractérisation Microondes et Matériaux (JCMM 2008), Apr 2008, Limoges, France. ⟨hal-00811205⟩

• Article dans une revue

Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure

A. Rowe, A. Donoso-Barrera, Ch. Renner, S. Arscott

Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843,…

Physical Review Letters, 2008, 100 (14), pp.145501-1-4. ⟨10.1103/PhysRevLett.100.145501⟩. ⟨hal-02347369⟩

• Article dans une revue

Piezoacoustic wave spectra using improved surface impedance matrix: Application to high impedance-contrast layered plates

Victor Y. Zhang, Bertrand Dubus, Bernard Collet, Michel Destrade

Starting from the general modal solutions for a homogeneous layer of arbitrary material and crystalline symmetry, a matrix formalism is developed to establish the semi analytical expressions of the surface impedance matrices (SIM) for a single piezo-electric layer. By applying the electrical…

Journal of the Acoustical Society of America, 2008, 213 (4), pp.1972-1982. ⟨10.1121/1.2836756⟩. ⟨hal-00341257⟩

• Article dans une revue

Microstubs resonators integrated to bent Y-branch waveguide

Y. Pennec, M. Beaugeois, B. Djafari-Rouhani, R. Sainidou, Abdellatif Akjouj, J.O. Vasseur, Leonard Dobrzynski, E.H. El Boudouti, J.-P. Vilcot, M. Bouazaoui, J.-P. Vigneron

Photonics and Nanostructures - Fundamentals and Applications, 2008, 6 (1), pp.26-31. ⟨10.1016/j.photonics.2008.01.002⟩. ⟨hal-04070891⟩

• Communication dans un congrès

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

Renaud Robin, Salim Touati, Karim Segueni, Olivier Millet, Lionel Buchaillot

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4µm) with low actuation voltage (7,5V). This design presents…

Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2008, Apr 2008, Nice, France. pp.56-59, ⟨10.1109/DTIP.2008.4752952⟩. ⟨hal-00277678⟩

• Article dans une revue

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

Jean-Luc Maurice, Gervasi Herranz, Christian Colliex, Isabelle Devos, Cécile Carrétéro, Agnès Barthelemy, Karim Bouzehouane, Stéphane Fusil, Dominique Imhoff, Éric Jacquet, François Jomard, Dominique Ballutaud, Mario Basletic

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron…

EPL - Europhysics Letters, 2008, 82, pp.17003. ⟨10.1209/0295-5075/82/17003⟩. ⟨hal-00193115⟩

• Communication dans un congrès

Low Voltage Totally Free Flexible RF MEMS Switch With Anti-Stiction System

Salim Touati, Nicolas Lorphelin, Alexandre Kanciurzewski, Renaud Robin, A.-S. Rollier, Olivier Millet, Karim Segueni

This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5V) and avoid stiction. First, the structure described with principal design issues, the corresponding anti-stiction system is presented and FEM simulations are done. Then…

DTIP 2008, Apr 2008, Nice, France. pp.66-70. ⟨hal-00277680⟩

• Brevet

Procédé de réalisation d'un composant électromécanique sur un substrat plan

F. Casset, C. Durand, P. Ancey

N° de brevet: FR2906238 (A1). 2008. ⟨hal-00372080⟩

• Article dans une revue

Hypersound damping in vitreous silica measured by picosecond acoustics

Arnaud Devos, M. Foret, S. Ayrinhac, P. Emery, B. Rufflé

The attenuation of longitudinal acoustic phonons up to frequencies nearing 250 GHz is measured in vitreous silica with a picosecond optical technique. By taking advantage of interferences on the probe beam, difficulties encountered in early pioneering experiments are alleviated. Sound damping at…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.100201. ⟨10.1103/PhysRevB.77.100201⟩. ⟨hal-00645595⟩