Publications

• Communication dans un congrès

A digital cartesian feedback path design for 2.4GHz ISM band standards

J. Zeleny, P. Wurm, P. Vincent, A. Kaiser

16th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2009, 2009, Tunisia. pp.523-526, ⟨10.1109/ICECS.2009.5410877⟩. ⟨hal-00474434⟩

• Communication dans un congrès

Comparison between picosecond ultrasonics and nanoindentation characterization in thin film

P.A. Mante, Arnaud Devos, G. Raymond, Pascal Morin, P. Ancey

2009 IEEE International Ultrasonics Symposium, 2009, Italy. pp.2564-2567, ⟨10.1109/ULTSYM.2009.5441964⟩. ⟨hal-00474457⟩

• Communication dans un congrès

Design and dosimetry of a new multi-band patch antenna for wireless communications

M. Ben Ahmed, M. Bouhorma, F. Elouaai, A. Mamouni

International Conference on Multimedia Computing and Systems, ICMCS'09, 2009, Morocco. pp.386-390, ⟨10.1109/MMCS.2009.5256666⟩. ⟨hal-00474443⟩

• Communication dans un congrès

Modelling and design of a wideband 6-18 GHz GaN resistive mixer

Giacomo V. Di, N. Thouvenin, Christophe Gaquière, A. Santarelli, F. Filicori

39th European Microwave Conference, EuMC 2009, 2009, Italy. pp.1812-1815, ⟨10.1109/EUMC.2009.5295933⟩. ⟨hal-00474495⟩

• Communication dans un congrès

All-fiber continuous wave coherent homodyne terahertz spectrometer operating at 1.55 μm wavelengths

Guillaume Ducournau, Alexandre Beck, Karine Blary, Emilien Peytavit, Mohammed Zaknoune, Tahsin Akalin, Jean-Francois Lampin, Matthieu Martin, Juliette Mangeney

Room temperature homodyne and heterodyne THz detections are reported using an 1.55 mum-based THz source. The first experimental demonstration is a continuous wave terahertz homodyne detection, where THz emission is performed with an InGaAs/InP uni-travelling carrier photodiode monolithically…

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5325577⟩. ⟨hal-00474424⟩

• Communication dans un congrès

Silicon substrate low-temperature-grown GaAs terahertz photomixers

Alexandre Beck, Karine Blary, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Chun Yang, Francis Hindle, Gaël Mouret

We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si…

34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Sep 2009, Busan, South Korea. pp.1-2, ⟨10.1109/ICIMW.2009.5325684⟩. ⟨hal-00474428⟩

• Communication dans un congrès

Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

M. Emam, M.A. Pavanello, Francois Danneville, D. Vanhoenacker-Janvier, J.P. Raskin

39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.125-128, ⟨10.1109/ESSDERC.2009.5331397⟩. ⟨hal-00474099⟩

• Communication dans un congrès

Scalability in a dynamic discovery service-based Jini for the next generation vehicle network

T. Lahdhiri, R. Baroody, N. Al-Holou, Iyad Dayoub, U. Mohammad

IEEE Symposium on Computers and Communications, ISCC'09, 2009, Tunisia. pp.30-35, ⟨10.1109/ISCC.2009.5202398⟩. ⟨hal-00474155⟩

• Communication dans un congrès

Blind MC-DS-CDMA parameters estimation in frequency selective channels

Crépin Nsiala-Nzéza, Marion Berbineau, Gérald Moniak, Roland Gautier, Gilles Burel, Iyad Dayoub

An apportunistic or cognitive radio system needs accurate knowledge of the radio spectrum it operates. The concept of cognitive radio is also exploited in the railway context in order to satisfy high availability and interoperability of wireless telecommunication systems everywhere as required by…

5th IEEE Broadband Wireless Access Workshop Workshop, co-located with IEEE GLOBECOM 2009, 2009, United States. pp.1-6, ⟨10.1109/GLOCOMW.2009.5360761⟩. ⟨hal-00474162⟩

• Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩