Publications

Affichage de 11371 à 11380 sur 16378


  • Article dans une revue

Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Nicolas Tiercelin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, V. Mortet, K. Haenen, A. Soltani

Applied Physics Letters, 2008, 93, pp.162902-1-3. ⟨10.1063/1.3001601⟩. ⟨hal-00356659⟩

  • Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

  • Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

  • Article dans une revue

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩

  • Communication dans un congrès

Acoustical properties characterization of a composite made of SU-8 and nanoparticules for BioMEMS application

Julien Carlier, Pierre Campistron, Dorothée Debavelaere-Callens, Caroline Soyer, Bertrand Nongaillard, S. Wang, X. Zhao

The photoresist SU‐8 (often used in microtechnology) has been acoustically characterized at the frequency of 1 GHz thanks to ZnO transducers. This material will be used to achieve acoustical matching between silicon and water at this frequency and a gain of about 5 dB has been obtained using the…

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. pp.4979-4983, ⟨10.1121/1.2934923⟩. ⟨hal-00361158⟩

  • Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

  • Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩