Publications

Affichage de 11411 à 11420 sur 16279


  • Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF…

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩

  • Communication dans un congrès

Etude des effets parasites dans les transistors à haute mobilité à base de nitrure : HEMT AlGaN/GaN

M. Gassoumi, O. Fathallah, Christophe Gaquière, G. Guillot, H. Maaref

11èmes Journées Maghrébines des Sciences de Matériaux, JMSM 2008, 2008, Hammamet, Tunisie. ⟨hal-00811731⟩

  • Communication dans un congrès

[Invited] Nonlinear magnetoacoustics of solids

Vladimir Preobrazhensky

Linear and Nonlinear Acoustic Wave Propagation in Heterogeneous Media : Modern Trends and Applications, 2008, Les Houches, France. ⟨hal-00811713⟩

  • Communication dans un congrès

Micro ripples, sand ripples and their universal wavelength scaling

P.J. Thomas, Farzam Zoueshtiagh, A. Merlen, V. Thomy

7th EUROMECH Fluid Mechanics Conference, EFMC7, 2008, Manchester, United Kingdom. ⟨hal-00811718⟩

  • Communication dans un congrès

THz emission from AlGaN/GaN high mobility transistors

N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.E. Levinshtein, S.L. Rumyantsev, M.A. Poisson, S. Delage, Christophe Gaquière, S. Vandenbrouck, A. Cappy

V International Conference 'Basic Problems of Optics', 2008, St Petersburg, Russia. ⟨hal-00811735⟩

  • Article dans une revue

InP/benzocyclobutene optical nanowires

Michèle Carette, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

Electronics Letters, 2008, 44, pp.902-903. ⟨10.1049/el:20081169⟩. ⟨hal-00357307⟩

  • Article dans une revue

Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation

A.S. Roy, C.C. Enz, T.C. Lim, Francois Danneville

IEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩. ⟨hal-00356669⟩

  • Article dans une revue

High-frequency noise performance of 60-nm gate-length FinFETs

J.P. Raskin, G. Pailloncy, D. Lederer, Francois Danneville, Gilles Dambrine, S. Decoutere, A. Mercha, B. Parvais

IEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩. ⟨hal-00356670⟩