Publications

Affichage de 11431 à 11440 sur 16064


  • Article dans une revue

Fundamental studies in nanosciences at the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN)

Guy Allan, Sophie Barbet, Yannick Coffinier, Christophe Delerue, D. Deresmes, Mamadou Diarra, Heinrich Diesinger, B. Grandidier, Lionel Marcon, Thierry Melin, Olexa Melnyk, Didier Stiévenard, Ludger Wirtz, Mariusz Zdrojek

This paper gives an overview over the fundamental research in nanosciences at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN). We present some highlights from the numerical simulation of the electronic structure of nanowires and nanotubes, the charge spectroscopy of Si…

International Journal of Nanotechnology, 2008, 5, 631-648, Special Issue on Nanotechnology in France. Part I : C'nano Nord-Ouest. ⟨10.1504/IJNT.2008.018686⟩. ⟨hal-00357348⟩

  • Article dans une revue

Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications

M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.2685-2691. ⟨10.1109/TMTT.2008.2006798⟩. ⟨hal-00376223⟩

  • Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

  • Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩

  • Article dans une revue

A comparative study of two non-destructive testing methods to assess near-surface mechanical damage in concrete structures

M. Goueygou, O. Abraham, J.F. Lataste

NDT & E International, 2008, 41, pp.448-456. ⟨10.1016/j.ndteint.2008.03.001⟩. ⟨hal-00356657⟩

  • Article dans une revue

Power dissipated measurement of an ultrasonic generator in a viscous medium by flowmetric method

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2008, 15, pp.973-980. ⟨10.1016/j.ultsonch.2008.03.005⟩. ⟨hal-00356988⟩

  • Article dans une revue

Wet-chemical approach for the halogenation of hydrogenated boron-doped diamond electrodes

Mei Wang, Manash R. Das, Vera G. Praig, François Lenormand, Musen Li, Rabah Boukherroub, Sabine Szunerits

Brominated and chlorinated boron-doped diamond electrodes were prepared through a radical substitution reaction and reacted further with alkyl-Grignard reagents.

Chemical Communications, 2008, 47, pp. 6294-6296. ⟨10.1039/b810975c⟩. ⟨hal-00417517⟩

  • Article dans une revue

Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Francois Vaurette, R. Leturcq, J.P. Nys, D. Deresmes, B. Grandidier, D. Stievenard

Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩. ⟨hal-00357349⟩