Publications

Affichage de 11441 à 11450 sur 16098


  • Communication dans un congrès

Preliminary investigations on the Te-doped AlInSb/GaInSb heterostructures for High Electron Mobility Transistor (HEMT) applications

L. Delhaye, L. Desplanque, X. Wallart

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702932⟩. ⟨hal-00360480⟩

  • Communication dans un congrès

New global blind equalization using two constant modulus asymmetrical modulations proposals

A. Zaouche, Iyad Dayoub, C. Tatkeu, Jean-Michel Rouvaen

67th IEEE Vehicular Technology Conference, VTC Spring 2008, 2008, Singapore. pp.663-667, ⟨10.1109/VETECS.2008.147⟩. ⟨hal-00360432⟩

  • Communication dans un congrès

Mesure normative de champ électrique émis par un câble alimenté par un hacheur

J. Genoulaz, L. Kone, F. Costa, B. Demoulin, M. Dunand

14ème Colloque International sur la Compatibilité Electromagnétique, CEM08, 2008, France. pp.140-142. ⟨hal-00361127⟩

  • Communication dans un congrès

CW generation up to 2 THz by ion-irradiated In0.53Ga0.47As photomixer driven at 1.55 µm wavelengths

Juliette Mangeney, Paul Crozat, A. Merigault, Karine Blary, Jean-Francois Lampin

We report the generation of continuous terahertz waves from microwave frequencies up to 2 THz obtained by photomixing two optical waves at 1.55-mum wavelengths in an optimized ion-irradiated In 0.53 Ga 0.47 As interdigitated photomixers. Output powers greater than 40 nW at 0.5 THz and 10 nW at 1…

Joint 33rd International Conference on Infrared and Millimeter Waves and 16th International Conference on Terahertz Electronics, IRMMW-THz 2008, Sep 2008, Pasadena, CA, United States. pp.424-425, ⟨10.1109/ICIMW.2008.4665631⟩. ⟨hal-00800986⟩

  • Communication dans un congrès

RS turbo codes with erasures for broad-band power line communication

F. Rouissi, F. Tlili, A. Ghazel, Virginie Degardin, M. Lienard

15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008, 2008, _, Malta. pp.822-825, ⟨10.1109/ICECS.2008.4674980⟩. ⟨hal-00800991⟩

  • Article dans une revue

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

M.A. Di Forte-Poisson, M. Magis, Maurice Tordjman, J. Di Persio, R. Langer, L. Toth, Bela Pécz, M. Guziewicz, J. Thorpe, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Christophe Gaquière, Gaudenzio Meneghesso, Virginie Hoel, Jean-Claude Jacquet, Sylvain Laurent Delage

This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with…

Journal of Crystal Growth, 2008, 310 (23), pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩. ⟨hal-00800708⟩

  • Article dans une revue

Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev

Journal of Applied Physics, 2008, 103, pp.083707-1-5. ⟨10.1063/1.2903144⟩. ⟨hal-00356986⟩

  • Article dans une revue

A history of chemistry à la Koyré? Introduction and setting of an epistemological problem

Raffaele Pisano

Khimiya, 2008, Khimiya/Chemistry: Bulgarian Journal of Science Education, 2 (17), pp.143-161. ⟨hal-04508029⟩