Publications

• Communication dans un congrès

Barrier layer downscaling of InAlN/GaN HEMTs

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, M. Knez, David Troadec, Christophe Gaquière, A. Chuvilin, U. Kaiser, N. Grandjean, E. Kohn

65th Annual Device Research Conference, DRC 2007, 2007, United States. pp.109-110, ⟨10.1109/DRC.2007.4373673⟩. ⟨hal-00284407⟩

• Communication dans un congrès

A novel zero-level packaging using BCB adhesive bonding and glass wet-etching for millimeter-wave applications

S. Seok, N. Rolland, P.A. Rolland

14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers'07, 2007, France. pp.2099-2102, ⟨10.1109/SENSOR.2007.4300579⟩. ⟨hal-00284092⟩

• Communication dans un congrès

Bendings and filters with single strip THz plasmonic waveguides

Tahsin Akalin, Emilien Peytavit, Jean-Francois Lampin

In this communication, we present measurement results on THz Planar Strip Plasmonic (THz-PSP) structures based on Planar Goubau Lines (PGL). The first part will be dedicated to the study of bendings (90deg for example) and the second one to filters fabricated with a corrugated PGL. We demonstrate…

Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, Sep 2007, Cardiff, United Kingdom. pp.75-76, ⟨10.1109/ICIMW.2007.4516402⟩. ⟨hal-00284103⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport…

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩

• Communication dans un congrès

Proposition of atomic force probes based on silicon ring-resonators

M. Faucher, B. Walter, A.S. Rollier, K. Segueni, Bernard Legrand, G. Couturier, J.P. Aimé, C. Bernard, R. Boisgard, L. Buchaillot

14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers'07, 2007, France. pp.1529-1532, ⟨10.1109/SENSOR.2007.4300436⟩. ⟨hal-00284391⟩

• Communication dans un congrès

A design for 24GHz SPDT using a single RF MEMS switch based on a totally free flexible membrane

R. Robin, L. Le Garrec, K. Segueni, O. Millet, L. Buchaillot

8th International Symposium on RF MEMS and RF Microsystems, MEMSWAVE 2007, 2007, Spain. pp.133-136. ⟨hal-00362686⟩

• Communication dans un congrès

CardioSense3D: Patient-Specific Cardiac Simulation

Hervé Delingette, Maxime Sermesant, Jean-Marc Peyrat, Nicholas Ayache, Kawal S. Rhode, Reza Razavi, Elliot R. Mcveigh, Dominique Chapelle, Jacques Sainte-Marie, Philippe Moireau, Miguel Angel Fernández, Jean-Frédéric Gerbeau, K. Djabella, Q. Zhang, Michel Sorine

no abstract

Proceedings of IEEE International Conference on Biomedical Imaging: From Nano to Macro (ISBI'07), 2007, Metro Washington DC, USA, United States. pp.628-631. ⟨inria-00616052⟩

• Article dans une revue

Transient self-heating effects in multifinger AlGaN/GaN HEMTs, with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.J. Würfl, M.A. Di Forte-Poisson, J.P. Teyssier, Christophe Gaquière, D. Pogany

Solid-State Electronics, 2007, 51, pp.969-974. ⟨10.1016/j.sse.2007.04.001⟩. ⟨hal-00283496⟩

• Article dans une revue

Templates for LaAlO3 epitaxy on silicon

Pierre Boulenc, Isabelle Devos

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0…

Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩