Publications

• Communication dans un congrès

Study and development of a low-frequency acoustic sensor dedicated to the vibratory analysis and the mechanical characterization of the plates

Georges Nassar, B. Merheb, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00362075⟩

• Communication dans un congrès

Low frequency composite acoustic sensor for highly absorbing media characterization

A. Skaf, Georges Nassar, Fabrice Lefebvre, Bertrand Nongaillard

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00362061⟩

• Communication dans un congrès

High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular beam epitaxy for microwave applications

S. Joblot, Y. Cordier, F. Semond, P. Vennegues, Sébastien Chenot, P. Lorenzini, M. Portail, J. Massies, J.C. Gerbedoen, A. Soltani, Christophe Gaquière, Jean-Claude de Jaeger

Materials Research Society Spring Meeting, MRS Spring 2008, Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates, 2008, San Francisco, CA, United States. ⟨hal-00362029⟩

• Communication dans un congrès

Charge injection and electrostatics of tailored graphene sheets and ribbons probed by Electric Force Microscope

A. Mahmood, J.F. Dayen, D. Tondelier, Thierry Melin, D. Vuillaume, Erik Dujardin

International Centre for Theoretical Physics Conference, Graphene Week 2008, 2008, Trieste, Italy. ⟨hal-00376233⟩

• Communication dans un congrès

Raman spectroscopy of boron-doped silicon nanowires

M. Marczak, E. Pichonat, W. Gebicki, Thierry Melin, D. Hourlier

European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, 2008, Warsaw, Poland. ⟨hal-00376240⟩

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩