Publications

• Communication dans un congrès

Electromagnetic actuation based on MEMS technology for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

6th International EuroHaptics Conference, EuroHaptics 2008, 2008, Spain. pp.437-446. ⟨hal-00360396⟩

• Communication dans un congrès

High-voltage HBTs compatible with high-speed SiGe BiCMOS technology

B. Geynet, P. Chevalier, S. Chouteau, G. Avenier, T. Schwartzmann, D. Gloria, Gilles Dambrine, Francois Danneville, A. Chantre

8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008, 2008, United States. pp.210-213, ⟨10.1109/SMIC.2008.59⟩. ⟨hal-00360406⟩

• Article dans une revue

Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Francois Vaurette, R. Leturcq, J.P. Nys, D. Deresmes, B. Grandidier, D. Stievenard

Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩. ⟨hal-00357349⟩

• Article dans une revue

Hysteretic magnetotransport in p-type AlxGa1-xAs heterostructures with In/Zn/Au ohmic contacts

B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, G. Blatter, D. Reuter, A.D. Wieck

The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.245307-1-4. ⟨10.1103/PhysRevB.77.245307⟩. ⟨hal-00357350⟩

• Article dans une revue

Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications

M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.2685-2691. ⟨10.1109/TMTT.2008.2006798⟩. ⟨hal-00376223⟩

• Article dans une revue

Lamb waves in phononic crystal slabs with square or rectangular symmetries

T. Brunet, Jerome O. Vasseur, Bernard Bonello, Bahram Djafari-Rouhani, Anne-Christine Hladky

Journal of Applied Physics, 2008, 104 (4), pp.043506. ⟨10.1063/1.2970067⟩. ⟨hal-00354918⟩

• Article dans une revue

Monte Carlo modeling of carrier-carrier scattering in semiconductors with nonparabolic bands

Olivier Bonno, Jean-Luc Thobel

An efficient algorithm to account for nonparabolicity in carrier-carrier scattering in an ensemble Monte Carlo simulator is proposed. The major difficulty of modeling intercarrier scattering in semiconductors with nonparabolic bands arises from the two particle momentum and energy conservation laws…

Journal of Applied Physics, 2008, 104 (5), pp.053719. ⟨10.1063/1.2976170⟩. ⟨hal-00360019⟩

• Article dans une revue

Modeling a surface-mounted Lamb wave emission-reception system : applications to structural health monitoring

Emmanuel Moulin, Sébastien Grondel, Jamal Assaad, Laurent Duquenne

The work described in this paper is intended to present a simple and efficient way of modeling a full Lamb wave emission and reception system. The emitter behavior and the Lamb wave generation are predicted using a two-dimensional (2D) hybrid finite element–normal mode expansion model. Then the…

Journal of the Acoustical Society of America, 2008, 124, pp.3521-3527. ⟨10.1121/1.2996337⟩. ⟨hal-00360098⟩

• Communication dans un congrès

Structural health monitoring using cross-correlation of an ambient noise field

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad, Sébastien Grondel, Pascal Poussot

Theoretical and experimental studies in underwater acoustic, seismology and more recently ultrasonic have demonstrated that an estimate of the Time Domain Green Function (TDGF) between two receivers could be obtained from the cross-correlation of a diffuse acoustic noise field of these two…

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨10.1121/1.2935098⟩. ⟨hal-00362060⟩

• Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩