Publications

• Article dans une revue

Transverse electric/transverse magnetic polarization converter using 1D finite biaxial photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

Journal of the Optical Society of America. A Optics, Image Science, and Vision, 2007, 24 (9), pp.2710-2718. ⟨10.1364/JOSAA.24.002710⟩. ⟨hal-00283163⟩

• Communication dans un congrès

Modelling and design of surface acoustic waves in optical-quality multi-layer GaN structures

Q. Meng, F. Causa, J. Sarma, Samuel Dupont, Jean-Claude Kastelik, V. Zhang

Semiconductor and Integrated Optoelectronics Conference, SIOE'07, 2007, United Kingdom. paper 51. ⟨hal-00285686⟩

• Communication dans un congrès

New procedure for verification of ability of magnetostriction ferrites to serve as a parametrically active medium in ultrasound phase conjugate systems

Andrey Brysev, Philippe Pernod, Vladimir Preobrazhensky

International Conference on Functional Materials, ICFM 2007, 2007, Crimea, Ukraine. pp.260. ⟨hal-00284127⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Communication dans un congrès

Phase conjugate ultrasound waves in moving nonlinear media

Vladimir Preobrazhensky, Philippe Pernod, Y. Pyl'Nov

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367044⟩

• Communication dans un congrès

Recent results on charge transport in molecular devices based on organic self-assembled monolayers

D. Vuillaume

10th International Conference on Advanced Materials, IUMRS-ICAM 2007, 2007, Bangalore, India. ⟨hal-00367335⟩

• Article dans une revue

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• Article dans une revue

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩

• Article dans une revue

Atomic scale study of TbCo2.5/Fe multilayers by laser-assisted tomographic atom probe

A. Grenier, R. Larde, E. Cadel, F. Vurpillot, J. Juraszek, J. Teillet, Nicolas Tiercelin

Journal of Applied Physics, 2007, 102, pp.033912-1-4. ⟨10.1063/1.2761825⟩. ⟨hal-00255798⟩

• Article dans une revue

Low-temperature-grown GaAs : modeling of transient reflectivity experiments

V. Ortiz, J. Nagle, Jean-Francois Lampin, Emmanuel Peronne, Antigoni Alexandrou

Journal of Applied Physics, 2007, 102, pp.043515-1-9. ⟨10.1063/1.2763971⟩. ⟨hal-00283048⟩