Publications

• Communication dans un congrès

Beam shaping and ultrafast modulation of THz quantum cascade lasers

Stefano Barbieri, Wilfried Maineult, Sukhdeep S Dhillon, Carlo Sirtori, Jean-Francois Lampin, Tahsin Akalin, Emilien Peytavit, N. Breuil, Jesse Alton, Harvey E. Beere, David Ritchie

European Microwave Week, Workshop ‘From THz devices to systems : Design, Modeling, Processes and Characterization', 2007, Munich, Germany. ⟨hal-00286314⟩

• Communication dans un congrès

Blind equalization applied to radio over fiber system for 60 GHz high data rate WLAN

A. Zaouche, Christophe Loyez, C. Lethien, N. Rolland, P.A. Rolland, Iyad Dayoub, Jean-Michel Rouvaen

Proceedings of the 4th International Conference on Sciences of Electronics, Technologies of Information and Telecommunications, SETIT 2007, 2007, Hammamet, Tunisia. ⟨hal-00366995⟩

• Communication dans un congrès

Plasma wave transistors for THz detection and emission

S. Bollaert

European Microwave Week, Workshop ‘From THz devices to systems : Design, Modeling, Processes and Characterization', 2007, Munich, Germany. ⟨hal-00286246⟩

• Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow…

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the…

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

Wide-band acousto-optic deflectors with high efficiency for visible range fringe pattern projector

Samuel Dupont, Jean-Claude Kastelik, F. Causa

Review of Scientific Instruments, 2007, 78, pp.105102-1-4. ⟨10.1063/1.2793775⟩. ⟨hal-00255746⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling

Philippe Basset, A. Kaiser, Bernard Legrand, D. Collard, L. Buchaillot

IEEE/ASME Transactions on Mechatronics, 2007, 12, pp.23-31. ⟨10.1109/TMECH.2006.886245⟩. ⟨hal-00255847⟩

• Article dans une revue

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• Article dans une revue

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩