Publications

• Article dans une revue

Templates for LaAlO3 epitaxy on silicon

Pierre Boulenc, Isabelle Devos

As direct epitaxy of crystalline LaAlO3 on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr0.5O monolayer and a 0.5 nm thick γ-Al2O3(0…

Microelectronics Reliability, 2007, 47 (4-5), pp.709-713. ⟨10.1016/j.microrel.2007.02.010⟩. ⟨hal-00285661⟩

• Article dans une revue

CVD growth of carbon nanotubes at very low pressure of acetylene

Yu.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, Sophie Guéron, Mathias Kobylko, Mathieu Kociak, Helene Bouchiat, Vincent Agache, Anne-Sophie Rollier, Lionel Buchaillot, Anne Marie Bonnot, A.Yu. Kasumov

We present a new technique for CVD synthesis of carbon nanotubes without any gas flow and using a very low pressure of acetylene (down to 0.5 mbar). The good quality of obtained nanotubes is confirmed by TEM observation and electron diffraction patterns, Raman spectroscopy and electron transport…

Applied physics. A, Materials science & processing, 2007, 88, pp.687-691. ⟨10.1007/s00339-007-4028-3⟩. ⟨hal-00351737⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Communication dans un congrès

Recent results on charge transport in molecular devices based on organic self-assembled monolayers

D. Vuillaume

10th International Conference on Advanced Materials, IUMRS-ICAM 2007, 2007, Bangalore, India. ⟨hal-00367335⟩

• Communication dans un congrès

GaN devices for high performance RF power amplifier

Christophe Gaquière, Brahim Benbakhti, S. Boulay, N. Defrance, Damien Ducatteau, H. Gerard, J-C Gerbedoen, Bertrand Grimbert, Virginie Hoel, J. Lemaitre, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger, F. Medjoub, Raphaël Aubry, Charu Dua, Christian Brylinski, Didier Floriot, G. Lecoustre, Erwan Morvan, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. ⟨hal-00367425⟩

• Communication dans un congrès

Laser doppler vibrometry for evaluating the piezoelectric coefficients d33 and d31 of PZT thin films

R. Herdier, D. Jenkins, El Hadj Dogheche, Denis Remiens, M. Sulk

Proceedings of the 19th International Symposium on Integrated Ferroelectrics, ISIF-19, 2007, Bordeaux, France. ⟨hal-00367387⟩

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩

• Autre publication scientifique

Fonctionnalités actives en optique intégrée à base de fils optiques en filière InP : application à la commutation optique

Marie Lesecq

2007. ⟨hal-00285757⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩