Publications
Affichage de 12481 à 12490 sur 16058
Thickness dependent morphology and resistivity of ultra-thin Al films growth on Si(111) by molecular beam epitaxy
D.K. Aswal, N. Joshi, A.K. Debnath, D.S. Gupta, D. Vuillaume, J.V. Yakhmi
Physica Status Solidi A (applications and materials science), 2006, 203, pp.1254-1258. ⟨hal-00127112⟩
Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions
D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi
Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩
Self assembled monolayers on silicon for molecular electronics
D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume
Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩
Excitons in boron nitride nanotubes : dimensionality effects
L. Wirtz, A. Marini, A. Rubio
Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩
Phonon instability in nanocrystalline silicon carbide
F. Cleri, T. Noda
physica status solidi (b), 2006, 243, pp.122-124. ⟨hal-00127852⟩
Raman spectroscopy of single-wall boron nitride nanotubes
R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau
Nano Letters, 2006, 6, pp.1812-1816. ⟨hal-00127851⟩
Electromagnetic wave propagation in quasi-one-dimensional comb-like structures made up of dissipative negative-phase-velocity materials
Gregorio Hernandez-Cocoletzi, L. Dobrzynski, Bahram Djafari-Rouhani, Housni Al-Wahsh, Driss Bria
Journal of Physics: Condensed Matter, 2006, 18, pp.3683-3690. ⟨10.1088/0953-8984/18/15/014⟩. ⟨hal-00127835⟩
Langmuir–Blodgett monolayers of InP quantum dots with short chain ligands
K. Lambert, L. Wittebrood, I. Moreels, D. Deresmes, B. Grandidier, Z. Hens
Journal of Colloid and Interface Science, 2006, 15, pp.597. ⟨hal-00127837⟩
Homodyne dual six-port network analyzer and associated calibration technique for millimeter wave measurement
Kamel Haddadi, D. Glay, T. Lasri
2006, 4 pp. ⟨hal-00126826⟩
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?
F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn
IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩