Publications

Affichage de 12481 à 12490 sur 16058


  • ART

Thickness dependent morphology and resistivity of ultra-thin Al films growth on Si(111) by molecular beam epitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, D.S. Gupta, D. Vuillaume, J.V. Yakhmi

Physica Status Solidi A (applications and materials science), 2006, 203, pp.1254-1258. ⟨hal-00127112⟩

  • COMM

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩

  • ART

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩

  • ART

Excitons in boron nitride nanotubes : dimensionality effects

L. Wirtz, A. Marini, A. Rubio

Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩

  • ART

Phonon instability in nanocrystalline silicon carbide

F. Cleri, T. Noda

physica status solidi (b), 2006, 243, pp.122-124. ⟨hal-00127852⟩

  • ART

Raman spectroscopy of single-wall boron nitride nanotubes

R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau

Nano Letters, 2006, 6, pp.1812-1816. ⟨hal-00127851⟩

  • ART

Langmuir–Blodgett monolayers of InP quantum dots with short chain ligands

K. Lambert, L. Wittebrood, I. Moreels, D. Deresmes, B. Grandidier, Z. Hens

Journal of Colloid and Interface Science, 2006, 15, pp.597. ⟨hal-00127837⟩

  • COMM

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩