Publications

• Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is…

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

• Communication dans un congrès

Running current through a single non resonant quantum state in silicon

Maxime Berthe, A. Urbieta, R. Stiufiuc, B. Grandidier, D. Deresmes, C. Delerue, D. Stiévenard, R. Rurrali, N. Lorente, L. Magaud, P. Ordejon

European Conference on Surface Science, ECOSS 24, 2006, Paris, France. ⟨hal-00127916⟩

• Article dans une revue

High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer

A. El Moussati, Christophe Dalle

Journal of Computational Electronics, 2006, 5, pp.235-240. ⟨hal-00128187⟩

• Article dans une revue

A study on power and bit assignment of embedded multi-carrier modulation schemes for hierarchical image transmission over digital subscriber line

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

IEICE Transactions on Communications, 2006, E89-B, pp.2071-2073. ⟨hal-00128171⟩

• Communication dans un congrès

Switching properties at nanoscale : on the influence of the intrinsic finite size effect

Laurent Baudry

International Symposium on Integrated Ferroelectrics, ISIF 2006, 2006, Honolulu, Hawaii, United States. ⟨hal-00128182⟩

• Article dans une revue

An open design microfabricated nib-like nanoelectrospray emitter tip on a conduction silicon substrate for the application of the ionization voltage

S. Le Gac, C. Rolando, S. Arscott

Journal of The American Society for Mass Spectrometry, 2006, 17, pp.75-80. ⟨hal-00128664⟩

• Article dans une revue

Thickness dependent morphology and resistivity of ultra-thin Al films growth on Si(111) by molecular beam epitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, D.S. Gupta, D. Vuillaume, J.V. Yakhmi

Physica Status Solidi A (applications and materials science), 2006, 203, pp.1254-1258. ⟨hal-00127112⟩

• Communication dans un congrès

On the crucial role of the insulator-semiconductor interface in organic thin film transistors

G. Horowitz, M. Mottaghi, P. Lang, F. Rodriguez, A. Yassar, S. Lenfant, D. Vuillaume

SPIE Annual Meeting, Symposium on Organic Field-Effect Transistors V, 2006, San Diego, CA, United States. ⟨hal-00127155⟩

• Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩

• Article dans une revue

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩