Publications

Affichage de 12761 à 12770 sur 16261


  • Communication dans un congrès

High current drive in ultra-short impact ionization MOS (I-MOS) devices

C. Charbuillet, S. Monfray, Emmanuel Dubois, P. Bouillon, T. Skotnicki

2006, paper 6.2. ⟨hal-00138690⟩

  • Article dans une revue

Charging and discharging processes of carbon nanotubes probed by electrostatic force microscopy

M. Zdrojek, Thierry Melin, H. Diesinger, D. Stievenard, W. Gebicki, L. Adamowicz

Journal of Applied Physics, 2006, 100, pp.114326/1-10. ⟨hal-00127829⟩

  • Article dans une revue

Electrical property evaluation of manganese-fluorine codoping of lead zirconate titanate thin films : compatibility between hard material and piezoelectric activity

M. Detalle, Denis Remiens, L. Lebrun, D. Guyomar

Journal of Applied Physics, 2006, 100, pp.094102-1-5. ⟨hal-00138713⟩

  • Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

  • Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is…

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩