Publications

• Article dans une revue

Etude préliminaire sur la synthèse des poudres nanométriques : rôle de l'écoulement dans le réacteur

Mohamed Amara, M. El Ganaoui, D. Bahloul-Hourlier

Mechanics & Industry, 2006, 7, pp.131-137. ⟨10.1051/meca:2006027⟩. ⟨hal-00243989⟩

• Communication dans un congrès

Développement d'un flextenseur piézoélectrique pour l'imagerie sismique

Bertrand Dubus, G. Haw, C. Granger, P. Mosbah, A. Kosecki, Bogdan Piwakowski, P. Meynier

8ème Congrès Français d'Acoustique, CFA2006, 2006, France. pp.159-162. ⟨hal-00240743⟩

• Communication dans un congrès

The major role of thermodynamics in the comprehension of 1D structures growth

D. Hourlier, P. Perrot

Trends in Materials and Nanosciences, TMN 2006, 2006, Strasbourg, France. ⟨hal-00243988⟩

• Communication dans un congrès

MEMS electromechanical resonators for RF applications

F. Casset, C. Durand, N. Abele, K. Segueni, L. Buchaillot, A.M. Ionescu, P. Ancey

16ème Forum de l'Interconnexion et du Packaging Microélectronique, INTERCONEX 2006, 2006, Besançon, France. ⟨hal-00244017⟩

• Communication dans un congrès

Specific nearby electronic scheme for multiplexed excitation and detection of piezoelectric silicon-based micromembranes resonant frequencies using FPGA technology

Denis Lagrange, Cédric Ayela, Liviu Nicu, Eric Cattan, Caroline Soyer

5th IEEE Conference on Sensors, IEEE Sensors 2006, 2006, South Korea. pp.45-49, ⟨10.1109/ICSENS.2007.355714⟩. ⟨hal-00244027⟩

• Article dans une revue

TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, Emmanuel Dubois

We report investigations of the silicide formation process in the Pt/Si structure of low Schottky barrier MOSFETs on SOI. The silicide layers are used there as source and drain contacts and the high quality of the silicide/Si interface and the silicide structure are essential for the electrical…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.274-277. ⟨10.1016/j.nimb.2006.10.033⟩. ⟨hal-00138656⟩

• Article dans une revue

Current conduction and saturation mechanism in AlGaN/GaN ungated structures

J. Kuzmik, S. Bychikhin, D. Pogany, Christophe Gaquière, E. Morvan

Current conduction and saturation mechanisms in ungated AlGaN/GaN/SiC transfer length method test structures with contact-to-contact distance L varying from 2to32µm are investigated. Current-voltage (I-V) characteristics are measured in the pulsed and in the direct current (dc) regimes. The pulsed…

Journal of Applied Physics, 2006, 99, pp.123720-1-7. ⟨10.1063/1.2207572⟩. ⟨hal-00154930⟩

• Communication dans un congrès

Development and characterization of piezofiber based 1-3 ultrasonic composites

A.J. Schonecker, T. Rödig, Anne-Christine Hladky, T. Daue

2006 US Navy Workshop on Acoustic Transduction Materials and Devices, 2006, State College, PA, United States. ⟨hal-00369955⟩

• Chapitre d'ouvrage

Rythmes de la sédimentation et interprétations paléoclimatiques lors du Postglaciaire dans les Alpes du Sud C et dendro-géomorphologie, deux chronomètres complémentaires

Olivier Sivan, Corinne Miramond, Jean-Louis Édouard

L'Erosion entre société, Climat et Paléoenvironnement., Presses universitaires Blaise-Pascal, s.p., 2006. ⟨halshs-00321976⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (…

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩