Publications

• COMM

Intégration des réseaux de câbles dans la simulation CEM automobile en hautes fréquence

Guillaume Andrieu, L. Kone, F. Bocquet, B. Demoulin, J.P. Parmentier

2006, pp.278-280. ⟨hal-00142607⟩

• ART

Electroformation of giant liposomes in microfluidic channels

K. Kuribayashi, G. Tresset, P. Coquet, H. Fujita, S. Takeuchi

Measurement Science and Technology, 2006, 17, pp.3121-3126. ⟨10.1088/0957-0233/17/12/S01⟩. ⟨hal-00244016⟩

• ART

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• ART

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• ART

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• COMM

Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

A. Turala, P. Rojo-Romeo, P. Regreny, M. Gendry, C. Priester

2006, 2 pp. ⟨hal-00152961⟩

• ART

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related…

MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩

• COMM

Simulation Monte Carlo de lasers à cascade quantique incluant le couplage électron-photon

Jean-Luc Thobel, Olivier Bonno, François Dessenne

Journées couplées GDR-E Térahertz 2897 et GDR Ondes 2451, 2006, Montpellier, France. ⟨hal-00247425⟩

• ART

La Science et l'Hypothèse di J–H. Poincaré. Note epistemologiche (J–H. Poincaré's La Science et l'Hypothèse. Epistemological Notes) Rivista di Epistemologia Didattica I/1, 279–300

Raffaele Pisano

• COMM

Weak NLOS channel sounding

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï

2006, pp.707-710. ⟨hal-00147513⟩