Publications

• COMM

A new organic memory FET

C. Novembre, David Guérin, K. Lmimouni, C. Gamrat, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163253⟩

• COMM

Dynamical study of the electrical transport through molecular tunnel junctions with consideration of interface impurities

N. Clement, S. Pleutin, O. Seitz, S. Lenfant, D. Cahen, D. Vuillaume

Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163251⟩

• COMM

Optoelectronic switch and memory devices based on polymer functionalized carbon nanotube transistors

J. Borghetti, Vincent Derycke, S. Lenfant, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume, J.P. Bourgoin

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127137⟩

• ART

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement…

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

• THESE

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des…, Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• PATENT

Dispositif de manipulation de gouttes destiné à l'analyse biochimique, procédé de fabrication du dispositif, et système d'analyse microfluidique

J.C. Fourrier, F. Caron, P. Tabourier, C. Druon

N° de brevet: FR2871150 (A1). 2005. ⟨hal-00372422⟩

• PATENT

Dispositif pour désorption par rayonnement laser incorporant une manipulation de l'échantillon liquide sous forme de gouttes individuelles permettant leur traitement chimique et biochimique

J.C. Fourrier, F. Caron, J.P. Lepesant, D. Loyaux, C. Rolando, P. Tabourier, C. Druon

N° de brevet: FR2871076 (A1). 2005. ⟨hal-00372424⟩

• COMM

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• ART

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for…

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩

• ART

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first…

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩