Publications
Affichage de 12891 à 12900 sur 16109
A new BCB film zero-level packaging for RF devices
S. Seok, N. Rolland, P.A. Rolland
2006, pp.1118-1121. ⟨hal-00147516⟩
Weak NLOS channel sounding
Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï
2006, pp.707-710. ⟨hal-00147513⟩
Effective dielectric constant of nanostructured Si layers
Christophe Delerue, Guy Allan
Applied Physics Letters, 2006, 88, pp.173117-1-3. ⟨10.1063/1.2198814⟩. ⟨hal-00127832⟩
Silicon surface nano-oxidation using scanning probe microscopy
D. Stievenard, Bernard Legrand
Progress in Surface Science, 2006, 81, pp.112-140. ⟨hal-00127846⟩
Microfluidic devices for ultra wide band electromagnetic spectroscopy of single cell
Tahsin Akalin, S. Arscott, Bertrand Bocquet, Nour Eddine Bourzgui, Vincent Senez, A. Treizebre, Teruo Fujii, Erwan Lennon, Yasuyuki Sakai, Takahisa Yamamoto
International Conference on Microtechnologies in Medicine and Biology, May 2006, Okinawa, Japan. pp.252-255, ⟨10.1109/MMB.2006.251542⟩. ⟨hal-00130878⟩
Conception, réalisation et caractérisation des microcanaux pour les applications microfluidiques
M. Gaudet
2006. ⟨hal-00138941⟩
Electroformation of giant liposomes in microfluidic channels
K. Kuribayashi, G. Tresset, P. Coquet, H. Fujita, S. Takeuchi
Measurement Science and Technology, 2006, 17, pp.3121-3126. ⟨10.1088/0957-0233/17/12/S01⟩. ⟨hal-00244016⟩
High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m
Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin
Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩
Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions
B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot
Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩
A new organic memory FET
C. Novembre, David Guérin, K. Lmimouni, C. Gamrat, D. Vuillaume
Third Meeting on Molecular Electronics, ElecMol'06, 2006, Grenoble, France. ⟨hal-00163253⟩