Publications

• Article dans une revue

[Review] Graphene loaded with metal nanoparticles/complexes catalyzed cross-coupling reactions: A review

Maryam Mirza-Aghayan, Amir Sepehr Moieni, Rabah Boukherroub

AbstractVarious catalytic reactions under suitable conditions were used for the carbon-carbon (C-C) bond formation, such as the Kumada, Mizoroki-Heck, Sonogashira, Negishi, Stille, Suzuki-Miyaura, Hiyama, andFukuyama cross-coupling reactions. Supporting metal nanoparticles or complexes on…

Journal of Organometallic Chemistry, 2023, 995, pp.122737. ⟨10.1016/j.jorganchem.2023.122737⟩. ⟨hal-04097170⟩

• Article dans une revue

Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, Farid Medjdoub

We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩

• Article dans une revue

Au@BN-enhanced laser desorption/ionization mass spectrometry and imaging for determination of fipronil and its metabolites in food and biological samples

Yanfang Zhao, Rabah Boukherroub, Guiju Xu, Huijuan Li, Ru-Song Zhao, Qin Wei, Xiang Yu, Xiangfeng Chen

Abstract Gold nanoparticles (AuNPs) represent an attractive inorganic matrix for laser desorption/ionization mass spectrometry (LDI-MS) detection of low-molecular-weight analytes; however, their direct use is hindered by severe aggregation. To limit AuNPs aggregation, hexagonal boron nitride…

Food Chemistry, 2023, 418, pp.135935. ⟨10.1016/j.foodchem.2023.135935⟩. ⟨hal-04053199⟩

• Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

• Article dans une revue

Saturated long chain fatty acids as possible natural alternative antibacterial agents: opportunities and challenges

Helena Arellano, Véronique Nardello-Rataj, Sabine Szunerits, Rabah Boukherroub, Anne-Laure Fameau

The spread of new strains of antibiotic-resistant pathogenic microorganisms has led to the urgent need to discover and develop new antimicrobial systems. The antibacterial effects of fatty acids have been well-known and recognized since the first experiments of Robert Koch in 1881, and they are now…

Advances in Colloid and Interface Science, 2023, 318, pp.102952. ⟨10.1016/j.cis.2023.102952⟩. ⟨hal-04155565⟩

• Communication dans un congrès

Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off, Selective area growth of P-GaN by MBE for the fabrication of AlGaN/GaN normally-off HEMTs

Daniel Rouly, Josiane Tasselli, Patrick Austin, Yvon Cordier, Aimeric Courville, Francois Vaurette, Aurélie Lecestre, Benjamin Reig, Karine Isoird, Frédéric Morancho

RESUME-La technologie des structures HEMT GaN fait l'objet d'importants développements pour les composants de puissance grand gap. Cependant, il est nécessaire de développer des solutions technologiques innovantes pour obtenir des composants normally-off performants. Nous présentons une…, The technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present a new normally-off structure based on a nanostructured P-GaN…

Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France. ⟨hal-04127127⟩

• Pré-publication, Document de travail

Diverses Modélisations Appliquées au Champs de la Microélectronique et des Nanotechnologies, Various Modeling Applied to the Field of Microelectronics and Nanotechnology

Christophe Krzeminski

D'importants progrès technologiques ont été réalisés au cours des dernières années pour développer de nouveaux procédés de fabrication, de manière à poursuivre la réduction d'échelle de composants électroniques. Ils se sont appuyés sur des simulations numériques, centre de mon activité…, Large technical progress have performed in the last decades to develop new fabrication process with the main objective to continue the downsizing for a last few microelectronics component. The main core of this work are the numerical modeling. In the first part of this document, the scientific work…

2023. ⟨hal-04174371⟩

• Communication dans un congrès

High occurence of Cryptosporidium parvum zoonotic subtypes in Diarrheal calves in France

Mohamed Mammeri, A Chevillot, Ilham Chenafi, Myriam Thomas, Christine Julien, Isabelle Vallée, Bruno Polack, Jérôme Follet, Karim Adjou

Annual Scientific Meeting of the European Veterinary Parasitology College, Ecole nationale vétérinaire d'Alfort (EnvA), Jul 2023, Maisons-Alfort, France. ⟨hal-04526288⟩

• Autre publication scientifique

Corrigendum: On overtravel and skate in cantilever-based probes for on-wafer measurements (2022 J. Micromech. Microeng. 32 057001)

Steve Arscott

This corrigendum reformulates the equations for the normal contact force of the probe and the condition for tip skate in the presence of friction. This enables a formulation of the effective spring constant of a tilted probe to be written down. This model is compared to that of others.

2023, pp.099501. ⟨10.1088/1361-6439/ace834⟩. ⟨hal-04182123⟩

• Rapport

Avis de l'Anses relatif aux lignes directrices visant à limiter l’exposition des personnes aux champs électromagnétiques (100 kHz – 300 GHz)

Anne Pereira de Vasconcelos, Valentina Andreeva, Serge Boarini, Anne Bourdieu, Jean-Marie Burkhardt, Philippe Chaumet-Riffaud, Thomas Claudepierre, Pierre Degauque, Thierry Douki, Didier Dulon, Guillaume Dutilleux, Jack Falcon, Nicolas Feltin, Luc Fontana, Pierre‐marie Girard, Fabrice Giraudet, Pascal Guénel, Irina Guseva Canu, Frédérique Moati, Jean-Luc Morel, Catherine Mouneyrac, Anne-Lise Paradis, Marie-Pierre Rols, Valérie Simonneaux, Alicia Torriglia, Françoise Viénot, Marion Boyer, Olivier Merckel, Olivia Roth-Delgado

En France, comme dans la majorité des pays européens, des valeurs limites pour l’exposition de la population générale aux champs électromagnétiques ont été définies dans la réglementation, en s’appuyant sur la Recommandation 1999/519/CE de l’Union européenne publiée en 1999. Pour limiter l’…

Saisine n°2021-SA-0192, Anses. 2023, 50 p. ⟨anses-04241299⟩