Publications

• Article dans une revue

Numerical modeling of TeraHertz electronic devices

L. Varani, C. Palermo, J.-F. Millithaler, J.-C. Vaissière, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Perez, D. Pardo, T. Gonzalez

Journal of Computational Electronics, 2006, 5 (2-3), pp.71-77. ⟨10.1007/s10825-006-8822-5⟩. ⟨hal-00328552⟩

• Communication dans un congrès

Reduced complexity power minimization algorithm for DMT transmission – Application to layered multimedia services over DSL

C. Goudemand, Marc G. Gazalet, François-Xavier Coudoux, Patrick Corlay, M Gharbi

13th International Conference on Electronics, Circuits and Systems, ICECS 2006, 2006, France. pp.728-731, ⟨10.1109/ICECS.2006.379892⟩. ⟨hal-00247415⟩

• Communication dans un congrès

On the use of a performance indicator for optimal pilot positioning in multicarrier systems

David Buèche, Patrick Corlay, Marc G. Gazalet, François-Xavier Coudoux, Marc Slachciak

We have recently proposed a simple performance indicator for discrete multitone systems, which accounts for the channel estimation error, the emitted power and the noise level. It shows a much better correlation with the bit error rate (BER) than the more classical mean square error (MSE) while…

13th International Conference on Electronics, Circuits and Systems, ICECS 2006, Dec 2006, Nice, France. pp.978-981, ⟨10.1109/ICECS.2006.379954⟩. ⟨hal-00247417⟩

• Communication dans un congrès

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Poisson, B. Grimbert, Christophe Gaquière

1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, United Kingdom. pp.54-57, ⟨10.1109/EMICC.2006.282748⟩. ⟨hal-00247418⟩

• Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• Article dans une revue

Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers

P. Gorostiza, C. Henry de Villeneuve, Q.Y. Sun, F. Sanz, X. Wallart, Rabah Boukherroub, P. Allongue

Journal of Physical Chemistry B, 2006, 110, pp.5576-5585. ⟨hal-00127062⟩

• Article dans une revue

Thickness dependent morphology and resistivity of ultra-thin Al films growth on Si(111) by molecular beam epitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, D.S. Gupta, D. Vuillaume, J.V. Yakhmi

Physica Status Solidi A (applications and materials science), 2006, 203, pp.1254-1258. ⟨hal-00127112⟩

• Article dans une revue

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩

• Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩

• Communication dans un congrès

Homodyne dual six-port network analyzer and associated calibration technique for millimeter wave measurement

Kamel Haddadi, D. Glay, T. Lasri

2006, 4 pp. ⟨hal-00126826⟩