Publications
Affichage de 13041 à 13050 sur 16092
Thin Film Transistors and nanotransitors based on organic architectures
K. Lmimouni, T. Heim, D. Vuillaume
General Assembly of the International Union of Radio Science, URSI 2005, 2005, New Delhi, India. ⟨hal-00125619⟩
Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps
Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain
Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩
Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls
Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy
IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩
Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist
G. Larrieu, Emmanuel Dubois
Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩
Piezoelectric micro-machined ultrasonic transducer (pMUT) for energy harvesting
Karim Dogheche, B. Cavallier, P. Delobelle, L. Hirsinger, S. Ballandras, Eric Cattan, Denis Remiens, M. Marzencki, B. Charlot, Skandar Basrour
Ultrasonics Symposium, 18-21 Sept., Sep 2005, Rotterdam, Netherlands. pp.939 - 942, ⟨10.1109/ULTSYM.2005.1603005⟩. ⟨hal-00079975⟩
Three-dimensionnal calculation of propagation losses in photonic crystal waveguides
S. Fasquel, Xavier Mélique, Olivier Vanbésien, D. Lippens
Optics Communications, 2005, 246 (1-3), pp.91-96. ⟨hal-00401300⟩
Experimental comparison of stochastic MIMO channel models
Jean-François Pardonche, Marion Berbineau, Christophe Seguinot
Annals of Telecommunications - annales des télécommunications, 2005, 60, pp.649-680. ⟨hal-00162805⟩
InP and InAsP channel HEMT for millimeter wave applications
D. Theron, F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2005, 2005, Miami, FL, United States. ⟨hal-00126470⟩
InP HEMT downscaling for power applications at W band
F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, F. Dessenne, Jean-Luc Thobel, D. Theron
IEEE Transactions on Electron Devices, 2005, 52, pp.2136-2143. ⟨hal-00126460⟩