Publications

• Communication dans un congrès

Design of a X-band GaN oscillator : from the low frequency noise device characterization and large signal modeling to circuit design

Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Laurent Bary, Jacques Rayssac, E. Morvan, B. Grimbert, S.L. Delage, Jean-Claude de Jaeger, Jacques Graffeuil

2006, 4 pp. ⟨hal-00128228⟩

• Communication dans un congrès

Spatially resolved Raman spectroscopy of single- and few-layer graphene

D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz

GDR-E Science and Application of Nanotubes Annual Meeting, Nan'Obernai 06, 2006, Obernai, France. ⟨hal-00127913⟩

• Communication dans un congrès

Spectroscopie électronique de boîtes quantiques et de nanocristaux semi-conducteurs

B. Grandidier

GDR Physique Quantique Mésoscopique, 2006, La Grande Motte, France. ⟨hal-00127918⟩

• Communication dans un congrès

Etude des gaps basses fréquences dans les cristaux phononiques

H. Larabi, Yan Pennec, Bahram Djafari-Rouhani, Jerome O. Vasseur

10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00127885⟩

• Communication dans un congrès

Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate

Brahim Benbakhti, Michel Rousseau, J-C Gerbedoen, Jean-Claude de Jaeger

10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00128165⟩

• Article dans une revue

Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer ingaas transistors

F. Teppe, M. Orlov, A.E. Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2006, 89 (22), pp.222109.1-222109.3. ⟨10.1063/1.2392999⟩. ⟨hal-00329604⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of…

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Communication dans un congrès

Metamaterial-based devices at millimetre and sub-millimetre wavelengths

D. Lippens

2006, 4 pp. ⟨hal-00152963⟩