Publications

• Article dans une revue

Top-down approaches for the study of single-cells : micro-engineering and electrical phenotype

Vincent Senez, Tahsin Akalin, S. Arscott, Nour Eddine Bourzgui, Bertrand Bocquet, Teruo Fujii, Erwan Lennon, Takahisa Yamamoto

Single-cell analysis is a very important field of research and is currently at the frontier of physical and biological sciences. Understanding how the phenotype of a single-cell arises from its genotype is a complex topic. Currently, the prevailing paradigm to analyze cellular functions is the…

Advances in Science and Technology, 2006, 53, pp.97-106. ⟨10.4028/www.scientific.net/AST.53.97⟩. ⟨hal-00138742⟩

• Communication dans un congrès

Fabrication and characterization of high index contrast optical nanowires in III-V semiconductor/benzocyclobutene

Michel Carette, D. Lauvernier, Malek Zegaoui, Jean Chazelas, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

We expose the technological process to realize III-V semiconductor optical nanowires embedded in a Benzocyclobutene (BCB) matrix based on adhesive wafer bonding. We also point out some properties of those nanophotonic waveguides to develop all optical switches.

European Conference on Optical Communication (ECOC), Jul 2006, Cannes, France. pp.217-218, ⟨10.1109/ECOC.2006.4801241⟩. ⟨hal-00138751⟩

• Article dans une revue

Mechanical properties determined by nano indentation tests of Pb(Zr,Ti)O3 and Pb(Mg1/3 Nb2/3)1-x TixO3) sputtered thin films

P. Delobelle, E. Fribourg-Blanc, Denis Remiens

Thin Solid Films, 2006, 515, pp.1385-1393. ⟨hal-00138710⟩

• Communication dans un congrès

Design of low frequency acoustic sensor for wheat dough study in kneading and fermentation phases

Georges Nassar, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard, R. Dib

2006, pp.1153-1163. ⟨hal-00138738⟩

• Article dans une revue

Effect of a Se monolayer on interface properties between Al2O3 and n-type Si(100)

G. Larrieu, M. Tao, N. Moumen, E. Moldonado, W.P. Kirk, G. Song, W. Bai, D.L. Kwong

Transactions of the Electrochemical Society, 2006, 1, pp.371. ⟨hal-00138658⟩

• Article dans une revue

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

R. Rengel, M.J. Martin, T. Gonzalez, J. Mateos, D. Pardo, Gilles Dambrine, J.P. Raskin, Francois Danneville

IEEE Transactions on Electron Devices, 2006, 53, pp.523-532. ⟨hal-00126521⟩

• Communication dans un congrès

Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology

F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech

2006, pp.248-251. ⟨hal-00126802⟩

• Article dans une revue

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• Article dans une revue

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• Article dans une revue

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of…

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩