Publications

• Communication dans un congrès

Conjugaison de phase appliquée au CND

Philippe Pernod, Vladimir Preobrazhensky

Journée Technique Contrôle Non Destructif, 2005, Villeneuve d'Ascq, France. ⟨hal-00137669⟩

• Communication dans un congrès

Dry etchnig of PZT thin films for bilayer actuator realization

Caroline Soyer, E. Fribourg-Blanc, Eric Cattan, Denis Remiens

2005, pp.203-211. ⟨hal-00138428⟩

• Article dans une revue

Ion beam etching of PZT thin films : influence of grain size on the damages induced

Caroline Soyer, Eric Cattan, Denis Remiens

Journal of the European Ceramic Society, 2005, 25, pp.2269-2272. ⟨hal-00138431⟩

• Communication dans un congrès

Determination by indentation method of sputtered PZT films mechanical parameters for Si-MEMs applications

P. Delobelle, E. Fribourg-Blanc, O. Guillon, Caroline Soyer, Eric Cattan, Denis Remiens

2005, pp.213-221. ⟨hal-00138429⟩

• Article dans une revue

Application of phase conjugation of ultrasound in nondestructive testing of objects with corrugated surface

L. Krutyansky, Philippe Pernod, K. Yamamoto

Physics of Wave Phenomena, 2005, 13, pp.87-90. ⟨hal-00138389⟩

• Article dans une revue

Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid exposition

G.S. Wang, Q. Zhao, X.J. Meng, J.H. Chu, Denis Remiens

Journal of Crystal Growth, 2005, 277, pp.450-456. ⟨hal-00138414⟩

• Article dans une revue

A Gm−C low−pass filter for zero−IF mobile applications with a very wide tuning range

D. Chamla, A. Kaiser, A. Cathelin, D. Belot

IEEE Journal of Solid-State Circuits, 2005, 40, pp.1443− 1450. ⟨hal-00138393⟩

• Article dans une revue

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain

Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩

• Article dans une revue

Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy

IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-…

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩