Publications

Affichage de 13341 à 13350 sur 16181


  • Communication dans un congrès

Close infrared thermography using an intensified CCD camera : application in nondestructive high resolution evaluation of electrothermally actuated MEMS

B. Serio, J.J. Hunsinger, F. Conseil, P. Derderian, D. Collard, L. Buchaillot, M.F. Ravat

2005, pp.819-829. ⟨hal-00147502⟩

  • Communication dans un congrès

Impact of the intrinsic parameters of the dielectric on the leakage current

G. Larrieu, M. Tao

2nd International Workshop on Advanced Gate Stack Technology, 2005, Austin, TX, United States. ⟨hal-00138407⟩

  • Communication dans un congrès

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

2005, pp.A/PII.01. ⟨hal-00138401⟩

  • Article dans une revue

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

G. Mahieu, B. Grandidier, D. Deresmes, J.-P. Nys, D. Stievenard, P. Ebert

Physical Review Letters, 2005, 94, pp.26407-1-4. ⟨10.1103/PhysRevLett.94.026407⟩. ⟨hal-00126234⟩

  • Article dans une revue

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

P. Chevalier, C. Fellous, L. Rubaldo, F. Pourchon, S. Pruvost, R. Beerkens, F. Saguin, N. Zerounian, B. Barbalat, Sylvie Lepilliet, D. Dutartre, D. Celi, I. Telliez, D. Gloria, And Al

IEEE Journal of Solid-State Circuits, 2005, 40, pp.2025-2034. ⟨hal-00125135⟩

  • Communication dans un congrès

Growth of silicon nanowires over Au nanoparticles supported on high surface oxide substrates

D. Bahloul-Hourlier, D. Luxembourg, D. Stievenard, P. Marecot, A. Addad, E. Payen

NSF-CNRS-IFP Workshop - Future directions in catalysis : nanostructured catalysts, 2005, Lyon, France. ⟨hal-00247493⟩

  • Communication dans un congrès

Theory of one-dimensional acoustic wave phase conjugation

A. Merlen, Q. Zhang

IEEE International Ultrasonics Symposium, 2005, Netherlands. pp.2097-2099. ⟨hal-00247436⟩

  • Article dans une revue

Voltage tunable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

J. Lusakowski, W. Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy, K. Karpierz

Journal of Applied Physics, 2005, 97, pp.64307-1-7. ⟨hal-00125162⟩

  • Article dans une revue

High mobility InGaAs/InAlAs pseudomorphic heterostructures on InP(001)

X. Wallart, B. Pinsard, F. Mollot

Journal of Applied Physics, 2005, 97, pp.053706-1-6. ⟨hal-00125384⟩