Publications

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High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the…

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

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HEMTs for millimeter and sub-millimeter waves applications

S. Bollaert, A. Cappy, Gilles Dambrine, I. Duszynski, Yannick Roelens, A. Shchepetov, X. Wallart, A. Wieszt

GDR THz, 2005, Montpellier, France. ⟨hal-00125314⟩

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Ballistic nanodevices for high frequency applications

S. Bollaert

International Conference on Materials for Advanced Technologies, ICMAT 2005, 2005, Singapore, Singapore. ⟨hal-00125313⟩

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Origin and control of spurious Lamb wave resonances in Bulk Acoustic Wave (BAW) resonators

A. Volatier, C. Pigot, P. Ancey, Bertrand Dubus

WCU/UI'05 Joint Conference, 2005, Beijing, China. ⟨hal-00124962⟩

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Ultrasonic cavitation in thin liquid layers

A. Moussatov, C. Granger, Bertrand Dubus

Ultrasonics Sonochemistry, 2005, 12, pp.415-422. ⟨hal-00124472⟩

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Etude d'une rugosité par ondes de Lamb : apports numériques et expérimentaux

B. Morvan, Anne-Christine Hladky, D. Leduc, J.L. Izbicki, P. Pareige

Journée du GDR Ondes - Modèles de propagation en acoustique, 2005, Paris, France. ⟨hal-00125900⟩

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A 40 GHz superheterodyne receiver integrated in 0.13 µm BiCMOS SiGe:C HBT technology

S. Pruvost, I. Telliez, Francois Danneville, Gilles Dambrine, M. Laurens

2005, pp.10-13. ⟨hal-00125902⟩

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Role of interfaces on the direct tunneling and the inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

D.K. Aswal, C. Petit, G. Salace, David Guérin, S. Lenfant, J.V. Yakhmi, D. Vuillaume

Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00125602⟩

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Charge injection and transport in a single organic monolayers island

D. Vuillaume

American Physical Society March Meeting, 2005, Los Angeles, CA, United States. ⟨hal-00125614⟩

• ART

Design and optimization of a 1.3/1.55-µm wavelength selective p-i-n photodiode based on multimode diluted waveguide

V. Magnin, L. Giraudet, Joseph Harari, Didier Decoster

IEEE Photonics Technology Letters, 2005, 17, pp.459-461. ⟨hal-00125655⟩