Publications
Affichage de 13401 à 13410 sur 16175
Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process
C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel
2005, pp.2243-2246. ⟨hal-00125311⟩
Comparison between DS-CDMA and modified Gegenbauer functions for a multi-user communication Ultra Wide Band system
F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, Marc Heddebaut, Tariq Boukour
IEE Proceedings. Communications, 2005, 152 (6), pp.1021-1028. ⟨10.1049/ip-com:20045236⟩. ⟨hal-00126472⟩
Metamorphic growth of InAs/InAlAs heterostructures on InP(001) substrates
X. Wallart, J. Lastennet, F. Mollot
13th European Molecular Beam Epitaxy Workshop, Euro-MBE, 2005, Grindelwald, Switzerland. ⟨hal-00125392⟩
High mobility InAs/AlInAs metamorphic heterostructures on InP (001)
X. Wallart, J. Lastennet, F. Mollot
2005, pp.94-97. ⟨hal-00125391⟩
Multi-resolution modulation : an optimization criterion based on information theory
Marie Zwingelstein, M Gharbi, Marc G. Gazalet
2005, pp.CD-ROM, CT07-1. ⟨hal-00126481⟩
Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride
Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger
Comsol Multiphysics Conference, 2005, Paris, France. ⟨hal-00126464⟩
Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriques
Christophe Delerue, Guy Allan
Congrès général de la Société Française de Physique, 2005, Lille, France. ⟨hal-00126454⟩
AlGaN/GaN : processing and characterisation at TIGER laboratory
Raphaël Aubry, Damien Ducatteau, Erwan Morvan, B. Grimbert, Thierry Dean, M. Francois, S. Touati, Virginie Hoel, J.C. Pesant, A. Leroy, D. Thenot, Marie-Antoinette Di Forte-Poisson, Michel Rousseau, Eva Chartier
13th European Gallium Arsenide and Other Semiconductor Applications Symposium, GAAS 2005, 2005, Paris, France. ⟨hal-00126465⟩
Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz
D. Glay, T. Lasri
2005, pp.206-213. ⟨hal-00125334⟩
As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot
Journal of Crystal Growth, 2005, 278, pp.564-568. ⟨hal-00125361⟩