Publications
Affichage de 13501 à 13510 sur 16175
Pentacene thin film transistors on self-assembled monolayers gate dielectrics
K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume
ElecMol'05, 2005, Grenoble, France. ⟨hal-00125605⟩
Novel dual-mode locking semiconductor laser for millimetre-wave generation
P. Acedo, C. Roda, H. Lamela, G. Carpintero, Jean-Pierre Vilcot, S. Garidel
2005, pp.59580V-1-9. ⟨hal-00130833⟩
Inelastic electron tunnelling in metal/alkylsilane/silicon juntions
C. Petit, G. Salace, S. Lenfant, D. Vuillaume
8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125598⟩
Compensation by design of thermal dilatation in RF MEMS switches
Q.H. Duong, X. Lafontan, D. Collard, L. Buchaillot, P. Schmitt, Patrick Pons, F. Flourens, F. Pressecq
2005, pp.190-194. ⟨hal-00128657⟩
Enhancement of cutoff frequency in AlGaN/GaN high electron mobility transistors using a silicon nitride based T-gate technology
S. Touati, Virginie Hoel, A. Soltani, Jean-Claude de Jaeger, M.A. Poisson, S. Delage
Proceedings of the 16th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides, Diamond 2005, 2005, Toulouse, France. ⟨hal-00131349⟩
Les antennes de transmission à courte distance
S. Baranowski
Club Pionniers de l'Electronique, 2005, Calais, France. ⟨hal-00140424⟩
Effet de la variabilité des faisceaux de câbles entrelacés sur la précision requise sur les modèles d'équipements électroniques automobiles
S. Egot, M. Klingler, L. Kone, S. Baranowski, B. Demoulin
GDR Ondes, Journée 'Gestion de l'incertitude et analyse de sensibilité aux paramètres', 2005, Paris, France. ⟨hal-00140423⟩
Ultrasonic cavitation in thin liquid layers
A. Moussatov, C. Granger, Bertrand Dubus
Ultrasonics Sonochemistry, 2005, 12, pp.415-422. ⟨hal-00124472⟩
Monte Carlo simulation of terahertz quantum cascade lasers : the influence of the modelling of carrier-carrier scattering
Olivier Bonno, Jean-Luc Thobel, François Dessenne
Proceedings of the 15th Workshop on Modelling and Simulation of Electron Devices, 2005, Pisa, Italy. ⟨hal-00131334⟩