Publications

• Communication dans un congrès

Démultiplexeur nanométriques à plasmons

Maxime Beaugeois, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, J.P. Vigneron

GDR Ondes, 2004, Orsay, France. ⟨hal-00141207⟩

• Communication dans un congrès

Conductivity change in a metal/pentacen/metal device

D. Tondelier, K. Lmimouni, David Troadec, C. Dufour, D. Vuillaume, C. Fery, J.P. Dagois, G. Haas

European Materials Research Society Spring Meeting, 2004, Strasbourg, France. ⟨hal-00140739⟩

• Communication dans un congrès

Diodes moléculaires auto-assemblées sur silicium

S. Lenfant, C. Merckling, David Guérin, D. Vuillaume, F. Tran Van, C. Chevrot

Journées Nationales du GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00140745⟩

• Communication dans un congrès

Microfluidic devices to measure the electrical impedance of single bio-cells

V. Senez, T. Yamamoto, B. Poussard, T. Fukuba, J.M. Capron, T. Fujii

2004, pp.53-56. ⟨hal-00141029⟩

• Communication dans un congrès

Numerical analysis of the process induced stresses in micromachined cantilever

V. Senez, T. Hoffmann

2004, pp.126-131. ⟨hal-00141034⟩

• Article dans une revue

High performance evanescent edge coupled waveguide uni-traveling-carrier photodiodes for >40Gb/s optical receivers

Mohand Achouche, Vincent Magnin, Didier Decoster, Joseph Harari, François Lelarge, Estelle Derouin, Christophe Jany, David Carpentier, Fabrice Blache

We have demonstrated a low-cost high-bandwidth and high-responsivity evanescent waveguide unitravelling-carrier photodiode (PD) fabricated using all 2-in InP processing including on-wafer mirrors and coating. Optimization of the optical input waveguide was made using the method of the genetic…

IEEE Photonics Technology Letters, 2004, 16, pp.584-586. ⟨10.1109/LPT.2003.821082⟩. ⟨hal-00141183⟩

• Autre publication scientifique

Contribution à l'optimisation de transistors à effet de champ MESFET à base de carbure de silicium 4 H pour applications en amplification de puissance RF/hyperfréquence

A. Kerlain

2004. ⟨hal-00141954⟩

• Article dans une revue

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, R. Quere, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVDgrowth optimisation of GaAlN/GaN heterostructures grown on silicon carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/…

Journal of Crystal Growth, 2004, 272 (1-4), pp.305-311. ⟨10.1016/j.jcrysgro.2004.08.121⟩. ⟨hal-00141957⟩

• Communication dans un congrès

1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

S.L. Rumyantsev, M. Shur, W. Knap, N. Dyakonova, F. Pascal, A. Hoffman, Y. Guhel, Christophe Gaquière, D. Theron

2004, pp.277-85. ⟨hal-00141970⟩

• Article dans une revue

Design of a wide-angle spectrum source for material characterization : point low-frequency ultrasonic sensor

Georges Nassar, Bertrand Nongaillard

NDT & E International, 2004, 37, pp.481-488. ⟨hal-00141974⟩