Publications

Affichage de 13821 à 13830 sur 16106


  • Communication dans un congrès

1/f noise and ballistic mobility in GaN/AlGaN heterostructure field effect transistors in high magnetic fields

S.L. Rumyantsev, M. Shur, W. Knap, N. Dyakonova, F. Pascal, A. Hoffman, Y. Guhel, Christophe Gaquière, D. Theron

2004, pp.277-85. ⟨hal-00141970⟩

  • Article dans une revue

Numerical and experimental analysis of second order effects and loss mechanisms in axisymmetrical cavities

C. Campos-Pozuelo, L. Elvira-Segura, Bertrand Dubus

Journal of the Acoustical Society of America, 2004, 115, pp.1973-1981. ⟨hal-00133846⟩

  • Communication dans un congrès

Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

J.S. Galloo, Yannick Roelens, S. Bollaert, E. Pichonat, X. Wallart, A. Cappy, J. Mateos, T. Gonzales

2004, pp.219-222. ⟨hal-00133884⟩

  • Chapitre d'ouvrage

High frequency noise sources extraction in nanometric MOSFETs

Francois Danneville, G. Pailloncy, Gilles Dambrine

Sikula J., Levinshtein M. Advanced experimental methods for noise research in nanoscale electronic devices, Kluwer Academic Publisher, pp.169-176, 2004, NATO Science Series II. Mathematics, Physics and Chemistry. ⟨hal-00577020⟩

  • Article dans une revue

Multi-Layer microstrip antennas on quartz substrates.Technological considerations and performance at 60 GHz

Philippe Coquet, Ronan Sauleau, K. Shinohara, T. Matsui

Microwave and Optical Technology Letters, 2004, 40 (1), pp.40-47. ⟨hal-00549268⟩

  • Communication dans un congrès

Microactuators and microstrip antenna for polarization diversity

Loïc Le Garrec, I. Roch-Jeune, Mohamed Himdi, Ronan Sauleau, O. Millet, L. Buchaillot

5th Workshop on MEMS for millimeter wave communications (MEMSWAVE 2004), Jun 2004, Upsala, Sweden. pp.D16-D19. ⟨hal-00549314⟩

  • Article dans une revue

Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

Arnaud Beaurain, Samuel Dupont, Hongwu Li, Jean-Pierre Vilcot, Christiane Legrand, Joseph Harari, Monique Constant, Didier Decoster

InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm.

Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩. ⟨hal-00141171⟩

  • Article dans une revue

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 85, pp.239-241. ⟨hal-00140714⟩

  • Communication dans un congrès

MIMO techniques for improving capacity and robustness of wireless communications in railway tunnels

M. Lienard, Pierre Degauque

Proceedings of the Cost 286 Meeting on EMC in Diffused Communications Systems, 2004, Hamburg, Germany, Germany. ⟨hal-00142325⟩