Publications
Affichage de 13881 à 13890 sur 16255
DC & AC characterization and modeling of N & P SOI MOSFET
C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, Gilles Dambrine, J. Russat, N. Fel
MEDEA+ T206 SOI Workshop, 2004, Crolles, France. ⟨hal-00133901⟩
100nm InAlAS/InGaAs double-gate HEMT using transferred substrate
Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
2004, pp.1023-1026. ⟨hal-00133886⟩
Lamb waves in BAW resonators : analysis of spurious resonances and design of resonators in the UHF-VHF range
A. Volatier, G. Caruyer, E. Defay, Bertrand Dubus
148th Acoustical Society of America Meeting, 2004, San Diego, CA, United States. ⟨hal-00133864⟩
Raman characterization of Mg<sup>+</sup> ion-implanted GaN
B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson
Electrical characterization of Au/n-GaN Schottky diodes.
B. Akkal, Z. Benamara, H. Abid, A. Talbi, Bernard Gruzza
Materials Chemistry and Physics, 2004, pp.31. ⟨hal-00272575⟩
On-wafer high frequency noise power measurements under cryogenic conditions : a new de-embedding approach [HEMT example]
S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan
2004, pp.913-916. ⟨hal-00154887⟩
Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité
M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière
GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩
AlGaN/GaN HEMTs : technology and microwave performance
Jean-Claude de Jaeger
Microwave Engineering Europe, 2004, mai, pp.30. ⟨hal-00141996⟩
Analyse des propriétés électromagnétiques des écrans cylindriques, application à la caractérisation de l'efficacité de blindage des câbles
Frédéric Broydé
2004. ⟨hal-00142006⟩
High microwave and noise performance of 0.17µm AlGaN/GaN HEMTs on high-resistivity silicon substrates
A. Minko, Virginie Hoel, Sylvie Lepilliet, Gilles Dambrine, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
IEEE Electron Device Letters, 2004, 25, pp.167-169. ⟨hal-00141951⟩