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Affichage de 1391 à 1400 sur 16179

Article dans une revue

Solid-Electrolyte-Free O3-LixTiS2 Cathode for High-Energy-Density All-Solid-State Lithium-Metal Batteries

Benjamin Hennequart, Michael Deschamps, Ronan Chometon, Bernhard Leube, Romain Dugas, Elisa Quemin, Pierre-Etienne Cabelguen, Christophe Lethien, Jean-Marie Tarascon

Composites made of high-capacity and high-potential LiNixMnyCo1–x–yO2 (NMC) lamellar transition-metal oxides and S-based ionic conductors are primarily used as positive electrodes in all-solid-state batteries (ASSBs). However, NMC coatings are necessary to prevent the chemical reactivity of oxygen…

ACS Applied Energy Materials, 2023, 6 (16), pp.8521-853. ⟨10.1021/acsaem.3c01383⟩. ⟨hal-04187062⟩

Article dans une revue

Sensor-Location-Specific Joint Acquisition of Peripheral Artery Bioimpedance and Photoplethysmogram for Wearable Applications

Margus Metshein, Anar Abdullayev, Antoine Gautier, Benoit Larras, Antoine Frappe, Barry Cardiff, Paul Annus, Raul Land, Olev Märtens

Background: Cardiovascular diseases (CVDs), being the culprit for one-third of deaths globally, constitute a challenge for biomedical instrumentation development, especially for early disease detection. Pulsating arterial blood flow, providing access to cardiac-related parameters, involves the…

Sensors, 2023, Special Issue Use of Smart Wearable Sensors and AI Methods in Providing P4 Medicine, 23 (16), pp.7111. ⟨10.3390/s23167111⟩. ⟨hal-04195296⟩

Communication dans un congrès

EME-GAN: A Conditional Generative Adversarial Network based Indoor EMF Exposure Map Reconstruction

Mohammed Mallik, Benjamin Allaert, Angesom Tesfay, Davy Gaillot, Joe Wiart, Laurent Clavier

New wireless communication technologies are developing exponentially. Meanwhile, concerns have arisen about the possible negative health effects of radiofrequency electromagnetic waves. This paper proposes a method based on a conditional generative adversarial network for the mapping of exposure to…, Les nouvelles technologies de communication sans fil se développent de façon exponentielle. Parallèlement des craintes sont apparues concernant de possibles effets délétères des ondes électromagnétiques de type radiofréquence sur la santé. Cet article propose une méthode basée sur un réseau…

29Â Colloque sur le traitement du signal et des image, GRETSI - Groupe de Recherche en Traitement du Signal et des Images, Aug 2023, Grenoble, France. pp.745-748. ⟨hal-04210419⟩

Article dans une revue

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

G. Di Gioia, E. Frayssinet, M. Samnouni, V. Chinni, P. Mondal, J. Treuttel, X. Wallart, M. Zegaoui, Guillaume Ducournau, Yannick Roelens, Yvon Cordier, Mohamed Zaknoune

Quasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3.…

Journal of Electronic Materials, 2023, 52, pp.5249-5255. ⟨10.1007/s11664-023-10499-3⟩. ⟨hal-04115301⟩

Article dans une revue

[Review] Graphene loaded with metal nanoparticles/complexes catalyzed cross-coupling reactions: A review

Maryam Mirza-Aghayan, Amir Sepehr Moieni, Rabah Boukherroub

AbstractVarious catalytic reactions under suitable conditions were used for the carbon-carbon (C-C) bond formation, such as the Kumada, Mizoroki-Heck, Sonogashira, Negishi, Stille, Suzuki-Miyaura, Hiyama, andFukuyama cross-coupling reactions. Supporting metal nanoparticles or complexes on…

Journal of Organometallic Chemistry, 2023, 995, pp.122737. ⟨10.1016/j.jorganchem.2023.122737⟩. ⟨hal-04097170⟩

Article dans une revue

Sub‐Micron thick Step‐Graded AlGaN Buffer on Silicon with a High Buffer Breakdown Field

Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Kathia Harrouche, Fabrice Semond, Farid Medjdoub

We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200846. ⟨10.1002/pssa.202200846⟩. ⟨hal-04042888⟩

Article dans une revue

Au@BN-enhanced laser desorption/ionization mass spectrometry and imaging for determination of fipronil and its metabolites in food and biological samples

Yanfang Zhao, Rabah Boukherroub, Guiju Xu, Huijuan Li, Ru-Song Zhao, Qin Wei, Xiang Yu, Xiangfeng Chen

Abstract Gold nanoparticles (AuNPs) represent an attractive inorganic matrix for laser desorption/ionization mass spectrometry (LDI-MS) detection of low-molecular-weight analytes; however, their direct use is hindered by severe aggregation. To limit AuNPs aggregation, hexagonal boron nitride…

Food Chemistry, 2023, 418, pp.135935. ⟨10.1016/j.foodchem.2023.135935⟩. ⟨hal-04053199⟩

Article dans une revue

Saturated long chain fatty acids as possible natural alternative antibacterial agents: opportunities and challenges

Helena Arellano, Véronique Nardello-Rataj, Sabine Szunerits, Rabah Boukherroub, Anne-Laure Fameau

The spread of new strains of antibiotic-resistant pathogenic microorganisms has led to the urgent need to discover and develop new antimicrobial systems. The antibacterial effects of fatty acids have been well-known and recognized since the first experiments of Robert Koch in 1881, and they are now…

Advances in Colloid and Interface Science, 2023, 318, pp.102952. ⟨10.1016/j.cis.2023.102952⟩. ⟨hal-04155565⟩

Article dans une revue

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, Olivier Parillaud, Sylvain Delage

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium…

Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. ⟨10.1002/pssa.202200476⟩. ⟨hal-03875911⟩

Communication dans un congrès

Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off, Selective area growth of P-GaN by MBE for the fabrication of AlGaN/GaN normally-off HEMTs

Daniel Rouly, Josiane Tasselli, Patrick Austin, Yvon Cordier, Aimeric Courville, Francois Vaurette, Aurélie Lecestre, Benjamin Reig, Karine Isoird, Frédéric Morancho

RESUME-La technologie des structures HEMT GaN fait l'objet d'importants développements pour les composants de puissance grand gap. Cependant, il est nécessaire de développer des solutions technologiques innovantes pour obtenir des composants normally-off performants. Nous présentons une…, The technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present a new normally-off structure based on a nanostructured P-GaN…

Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France. ⟨hal-04127127⟩