Publications

Affichage de 14071 à 14080 sur 16255


  • Communication dans un congrès

Transmission of RF and microwave signals by optical fibers

Jean-Pierre Vilcot, C. Lethien

2004, pp.169-170. ⟨hal-00141199⟩

  • Communication dans un congrès

High speed and high responsivity UTC photodiode module for >40 Gb/s optical receivers

Mohand Achouche, Vincent Magnin, Joseph Harari, Didier Decoster, Fabrice Blache, Jean-Guy Provost, Estelle Derouin, David Carpentier, S. Vuye, Louis Giraudet, Michel Goix, F. Jorge

Optical Fiber Communication Conference, Feb 2004, Los Angeles, CA, United States. TuM4, 3 pp. ⟨hal-00141189⟩

  • Article dans une revue

PZT polarization voltage effects on off-centered PZT patch actuating silicon membrane

M. Guirardel, C. Bergaud, Eric Cattan, Denis Remiens, B. Belier, S. Petitgrand, A. Bosseboeuf

Sensors and Actuators A: Physical , 2004, 110, pp.385-389. ⟨hal-00141180⟩

  • Communication dans un congrès

Electron-beam-induced reactivation of Si dopants in hydrogenated 2D AlGaAs heterostructures : a possible new route of fabricating III-V nanostructures

L. Kurowski, D. Bernard-Loridant, E. Constant, Didier Decoster

2004, pp.S127-S132. ⟨hal-00141184⟩

  • Article dans une revue

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩

  • Communication dans un congrès

AC-only RF-ID tags for barcode replacement

S. Briole, C. Pacha, K. Goser, A. Kaiser, R. Thewes, W. Weber, R. Brederlow

2004, pp.438-537. ⟨hal-00140988⟩

  • Communication dans un congrès

Acoustic wave propagation in functionally graded material (FGM) cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2004, pp.1199-1200. ⟨hal-00142049⟩

  • Communication dans un congrès

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

  • Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩