Publications

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Communication dans un congrès

Antennes planes bi-couches imprimées sur quartz. Considérations technologiques et performances à 60 GHz

Philippe Coquet, Ronan Sauleau, Hervé Lhermite, J.P. Daniel, T. Matsui

Treizièmes Journées Nationales Micro-ondes, May 2003, Lille, France. 4 p. ⟨hal-00553237⟩

• Article dans une revue

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• Communication dans un congrès

New Schottky source/drain architectures

Emmanuel Dubois

Workshop Micro et Nanoélectronique, 2003, Crolles, France. ⟨hal-00146417⟩

• Article dans une revue

Wide and narrow-band bandpass coplanar filters in the W-frequency band

Eric Rius, Gaëtan Prigent, H. Happy, Gilles Dambrine, Samuel Boret, A. Cappy

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the…

IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (3), pp.784-791. ⟨10.1109/TMTT.2003.808586⟩. ⟨hal-00145985⟩

• Communication dans un congrès

SU-8 technology and monolithic columns for integration in a biological lab-on-chip

Julien Carlier, S. Le Gac, S. Arscott, V. Thomy, J.C. Fourrier, F. Caron, C. Cren-Olive, C. Rolando, J.C. Camart, P. Tabourier

2003, pp.315-318. ⟨hal-00146385⟩

• Communication dans un congrès

Validation d'un modèle non linéaire pour MOSFET au moyen des mesures grand signal

A. Siligaris, Gilles Dambrine, D. Schreurs, Francois Danneville

2003, pp.6A-4. ⟨hal-00146013⟩

• Communication dans un congrès

Quantum calculation of leakage current in stacked gate dielectrics for nano-MOS structures

Eric Lheurette, M. Le Roy, O. Vanbésien, D. Lippens

Proceedings of the 14th Workshop on Modelling and Simulation of Electron Devices, 2003, Barcelona, Spain. ⟨hal-00146102⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

Non-linear phenomenological model for RF advanced MOSFET

A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville

European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩