Publications

• Article dans une revue

M-line spectroscopy for optical analysis of thick LiNbO3 layers grown on sapphire substrates by radio-frequency multistep sputtering

El Hadj Dogheche, X. Lansiaux, Denis Remiens

Journal of Applied Physics, 2003, 93 (2), pp.1165-1168. ⟨10.1063/1.1530367⟩. ⟨hal-00146473⟩

• Article dans une revue

Mechanical analysis of interconnect structures using process simulation

V. Senez, T. Hoffmann, P. Le Duc, F. Murray

Journal of Applied Physics, 2003, 93, pp.6039-6049. ⟨hal-00146398⟩

• Chapitre d'ouvrage

Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance

Y. Cordier, S. Bollaert, M. Zaknoune, J.M. Chauveau, A. Cappy

CAI W.Z. III-V semiconductor heterostructures : physics and devices, Research Signpost, Kerala, India, pp.111-138, 2003. ⟨hal-00132383⟩

• Communication dans un congrès

Numerical analysis of the process induced stresses in silicon microstructures

V. Senez, T. Hoffmann, A. Armigliato, I. de Wolf

2003, pp.350-361. ⟨hal-00146444⟩

• Article dans une revue

Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates

A. Curutchet, N. Malbert, N. Touboul, Christophe Gaquière, A. Minko, M. Uren

Microelectronics Reliability, 2003, 43, pp.1713-1718. ⟨hal-00146665⟩

• Communication dans un congrès

Détermination des paramètres limitant la montée des MOSFETs sub-100nm

M. Vanmackelberg, Sylvie Lepilliet, C. Raynaud, M. Dehan, Gilles Dambrine

2003, pp.1D-5. ⟨hal-00145999⟩

• Autre publication scientifique

Réalisation d'un banc de mesure d'intermodulation biton en bande Ka : application à l'analyse des causes technologiques de non-linéarité des HEMTs de puissance

Frédéric Bue-Erkmen

2003. ⟨hal-00146643⟩

• Communication dans un congrès

Study and realisation of a micromechanical relay for use in harsh environment

F. Conseil, P. Derderian, M.F. Ravat, D. Collard, L. Buchaillot

2003, pp.108-112. ⟨hal-00146461⟩

• Article dans une revue

60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs

M. Zaknoune, M. Ardouin, Y. Cordier, S. Bollaert, B. Bonte, Didier Theron

IEEE Electron Device Letters, 2003, 24, pp.724-726. ⟨hal-00146648⟩

• Article dans une revue

Optical transitions in few-electron artificial atoms strongly confined in ZnO nanocrystals

Alexander Germeau, Aarnoud L. Roest, Daniel Vanmaekelbergh, Guy Allan, Christophe Delerue, Eric A. Meulenkamp

We have studied the optical transitions in artificial atoms consisting of one to ten electrons occupying the conduction levels in ZnO nanocrystals. We analyzed near IR absorption spectra of assemblies of weakly coupled ZnO nanocrystals for a gradually increasing electron number and found four…

Physical Review Letters, 2003, 90, pp.097401/1-4. ⟨10.1103/PhysRevLett.90.097401⟩. ⟨hal-00146610⟩