Publications

• Article dans une revue

Micromachined 2D nanoelectrospray emitter

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

A novel 2D nanoelectrospray emitter for mass spectrometry has been micromachined using photoresist SU-8 on silicon substrates using one-step photomasking. The design contains a reservoir, a capillary slot and an emitter tip. The emitters were successfully tested on an ion trap mass spectrometer. A…

Electronics Letters, 2003, 39 (24), pp.1702. ⟨10.1049/el:20031099⟩. ⟨hal-02347842⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Communication dans un congrès

Assessment of deteriorated concrete cover

F. Buyle-Bodin, Bogdan Piwakowski, A. Fnine, M. Goueygou, S. Ould-Naffa

Proceedings of the 2003 Workshop on Nondestructive Testing of Materials, Structures and Textures, NTM'03, 2003, Warsaw, Poland. ⟨hal-00250184⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge…

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method…

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Communication dans un congrès

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau

European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩

• Article dans une revue

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications ?

Gilles Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin

IEEE Electron Device Letters, 2003, 24, pp.189-191. ⟨hal-00145984⟩

• Communication dans un congrès

Protéomique intégrée

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

Journées Nationales du Réseau Micro et Nano Technologies, 2003, Lille, France. ⟨hal-00146396⟩

• Communication dans un congrès

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩