Publications

Affichage de 14241 à 14250 sur 16109


  • Communication dans un congrès

Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on silicon

Christophe Delerue, Stéphane Lenfant, Christophe Krzeminski, Guy Allan, Dominique Vuillaume

French-USA Conference on Molecular-scale Electronics, 2003, Paris, France. ⟨hal-00146177⟩

  • Communication dans un congrès

Characterization of MIS tunnel junctions by IETS

G. Salace, C. Petit, D. Vuillaume

203rd Meeting of the Electrochemical Society, 2003, Paris, France. ⟨hal-00146170⟩

  • Communication dans un congrès

Charge transport in DNA

T. Heim, D. Deresmes, D. Vuillaume

Materials Research Society Fall Meeting, 2003, Boston, MA, United States. ⟨hal-00146174⟩

  • Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

  • Communication dans un congrès

Study of air-solid interface wave by laser ultrasonics

M.L. Qian, R.L. Peng, W.X. Hu, Wei-Jiang Xu, Mohamed Ourak

2003, pp.1419-1422. ⟨hal-00147111⟩

  • Communication dans un congrès

Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs

Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, G. Pailloncy, Sylvie Lepilliet, J.P. Raskin

SPIE Fluctuations and Noise Symposium, Noise in Devices and Circuits, 2003, Sante Fe, NM, United States. ⟨hal-00146001⟩

  • Article dans une revue

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

A. Sleiman, A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, Jean-Luc Thobel

IEEE Transactions on Electron Devices, 2003, 50, pp.2009-2014. ⟨hal-00146070⟩

  • Communication dans un congrès

Path delay model based on alpha-stable distribution for the 60 GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

2003, pp.1638-1643. ⟨hal-00146042⟩

  • Article dans une revue

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate

N. Vellas, Christophe Gaquière, A. Minko, Virginie Hoel, Jean-Claude de Jaeger, Y. Cordier, F. Semond

IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257. ⟨hal-00146662⟩