Publications

• Communication dans un congrès

High frequency noise sources extraction in nanometrique MOSFETs

Francois Danneville, G. Pailloncy, Gilles Dambrine

NATO Advanced Research Workshop, Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, 2003, Brno, Czech Republic. ⟨hal-00146038⟩

• Communication dans un congrès

Nondestructive defects detection inside dielectric materials by microwave techniques

M. Maazi, D. Glay, T. Lasri

2003, pp.Session 3A. ⟨hal-00146044⟩

• Article dans une revue

Inelastic electron tunneling spectroscopy in n-MOS junctions with ultra-thin oxides

C. Petit, G. Salace, D. Vuillaume

Solid-State Electronics, 2003, 47, pp.1663-1668. ⟨hal-00146155⟩

• Communication dans un congrès

Self-assembled materials

D. Vuillaume

International Summer School on Advanced Microelectronics, MIGAS 2003, 2003, Autrans, France. ⟨hal-00146172⟩

• Communication dans un congrès

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon

Alain Claverie, Fuccio Cristiano, B. Colombeau, Xavier Hebras, P. Calvo, Nikolay Cherkashin, Y. Lamrani, E. Scheid, B. de Mauduit

2003, pp.73. ⟨hal-00146421⟩

• Communication dans un congrès

Comparative measurements of the optical spectrum dependence on distance between laterally coupled diode lasers

H. Lamela, R. Santos, G. Carpintero, Jean-Pierre Vilcot, A. Barsella, J. Figueiredo, M. Pessa

2003, pp.86-91. ⟨hal-00146495⟩

• Article dans une revue

Actionneurs films minces pour contrôle santé de structures

E. Fribourg-Blanc, M. Dupont, D. Osmont, Eric Cattan, Denis Remiens

Instrumentation, Mesure, Métrologie, 2003, 3, pp.225-237. ⟨hal-00146476⟩

• Communication dans un congrès

Microfluidic systems for high-throughput proteomics

S. Le Gac, S. Arscott, C. Druon, P. Tabourier, C. Rolando

2003, pp.70-73. ⟨hal-00146443⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most…

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩