Publications

• Communication dans un congrès

Electrostatical coupling-spring for micro-mechanical filtering applications

D. Galayko, A. Kaiser, L. Buchaillot, D. Collard, C. Combi

2003, pp.530-533. ⟨hal-00146403⟩

• Article dans une revue

Design, realization and testing of micro-mechanical resonators in thick-film silicon technology with postprocess electrode to resonator gap reduction

D. Galayko, A. Kaiser, L. Buchaillot, Bernard Legrand, D. Collard, C. Combi

Journal of Micromechanics and Microengineering, 2003, 13, pp.134-140. ⟨hal-00146391⟩

• Communication dans un congrès

Ultimate technology for micromachining of nanometric gap HF micromechanical resonators

E. Quevy, Bernard Legrand, D. Collard, L. Buchaillot

2003, pp.157-160. ⟨hal-00146462⟩

• Communication dans un congrès

Electro-optical probe dedicated to the on-line testing of electronic systems

B. Pannetier, P. Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

2003, pp.275. ⟨hal-00162741⟩

• Autre publication scientifique

Contribution à la caractérisation diélectrique microonde de cristaux liquides. Applications aux circuits agiles en fréquence

N. Tentillier

2003. ⟨hal-00162747⟩

• Article dans une revue

Path delay model based on alpha-stable distribution for the 60 GHz indoor channel

Nourddine Azzaoui, Laurent Clavier, Rachid Sabre

In this work we give a statistical model of the path's arrival time in the 60GHz wide band channel. This model is based on the class of stables distributions; we show its accurateness on modeling real data. We also give a theoretical justification of its compatibility.

Proceeding of Global Telecommunications Conference, 2003, Volume 3, pp.1638 - 1643 vol.3. ⟨10.1109/GLOCOM.2003.1258515⟩. ⟨hal-00255952⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most…

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩

• Article dans une revue

Crystallographic and optical properties of epitaxial Pb(Zr-0.6,Ti-0.4)O-3 thin films grown on LaAlO3 substrates

B. Vilquin, R. Bouregba, G. Poullain, H. Murray, El Hadj Dogheche, Denis Remiens

Pb(Zr0.6,Ti0.4)O3 (PZT) thin films are grown in situ on LaAlO3 substrates by rf magnetron sputtering. The relationship between structural and optical properties is investigated as a function of growth temperature. The ferroelectric films exhibit satisfying crystallization with epitaxial growth from…

Journal of Applied Physics, 2003, 94 (8), pp.5167-5171. ⟨10.1063/1.1610776⟩. ⟨hal-00162729⟩

• Article dans une revue

Shock wave coupling between terahertz transmission lines on GaAs

L. Desplanque, Emilien Peytavit, Jean-Francois Lampin, D. Lippens, F. Mollot

Applied Physics Letters, 2003, 83, pp.2483-2485. ⟨hal-00018495⟩