Publications

• Communication dans un congrès

Influence de la température sur les caractéristiques pulsées statiques et hyperfréquences des HEMTs AlGaN/GaN sur substrat silicium résistif (111)

M. Werquin, Christophe Gaquière, N. Vellas, E. Delos, D. Ducatteau, Y. Cordier, S. Delage, Jean-Claude de Jaeger

2003, pp.1D-13. ⟨hal-00146691⟩

• Communication dans un congrès

Nonlinear acoustics of phase conjugate waves in heterogeneous media (NGA approach)

Vladimir Preobrazhensky, Philippe Pernod

2003, pp.875-878. ⟨hal-00146134⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies

Dominique Vuillaume, Stéphane Lenfant, Christophe Krzeminski, Guy Allan, Christophe Delerue

226th American Chemical Society National Meeting - Fall 2003, Sep 2003, New York, NY, United States. ⟨hal-00146383⟩

• Article dans une revue

Inelastic electron tunneling spectroscopy in n-MOS junctions with ultra-thin oxides

C. Petit, G. Salace, D. Vuillaume

Solid-State Electronics, 2003, 47, pp.1663-1668. ⟨hal-00146155⟩

• Communication dans un congrès

Electrostatical coupling-spring for micro-mechanical filtering applications

D. Galayko, A. Kaiser, L. Buchaillot, D. Collard, C. Combi

2003, pp.530-533. ⟨hal-00146403⟩

• Article dans une revue

Design, realization and testing of micro-mechanical resonators in thick-film silicon technology with postprocess electrode to resonator gap reduction

D. Galayko, A. Kaiser, L. Buchaillot, Bernard Legrand, D. Collard, C. Combi

Journal of Micromechanics and Microengineering, 2003, 13, pp.134-140. ⟨hal-00146391⟩

• Communication dans un congrès

Ultimate technology for micromachining of nanometric gap HF micromechanical resonators

E. Quevy, Bernard Legrand, D. Collard, L. Buchaillot

2003, pp.157-160. ⟨hal-00146462⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most…

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩

• Article dans une revue

A new concept of focusing antennas using plane-parallel Fabry-Perot cavities with non-uniform mirrors

Ronan Sauleau, Philippe Coquet, T. Matsui, J.P. Daniel

IEEE Transactions on Antennas and Propagation, 2003, 51 (11), pp.3171-3175. ⟨hal-00553218⟩