Publications

Affichage de 14401 à 14410 sur 16090


  • Communication dans un congrès

Vivaldi antenna for obstacle detection and warning system at 94 GHz

Claire Migliaccio, B. D. Nguyen, J.-L. Le Sonn, Christian Pichot, K. Yamamoto, N. Yonemoto, K. Yamada, N. Rolland, K. Vanoverschelde

Journées Internationales de Nice sur les Antennes (JINA 2002), Nov 2002, Nice, France. pp.279-282. ⟨hal-00984119⟩

  • Article dans une revue

High performance double-sided microstrip PBG filter

Tahsin Akalin, Miguel A. G. Laso, E. Delos, Txema Lopetegi, Olivier Vanbésien, Mario Sorolla, Didier Lippens

Microwave filters in microstrip technology have been designed by taking advantage of metal patterning of the front and back-side planes. It is shown that such an approach with drilled holes in the ground plane for the high impedance sections permits one to alleviate some of the drawbacks associated…

Microwave and Optical Technology Letters, 2002, 35, pp.90-93. ⟨10.1002/mop.10525⟩. ⟨hal-00148634⟩

  • Communication dans un congrès

High performance HBV multipliers monolithically integrated onto a host quartz substrate

T. David, S. Arscott, J.-M. Munier, Thibaut Decoopman, Tahsin Akalin, Patrick Mounaix, Xavier Mélique, Olivier Vanbésien, Gérard Beaudin, Didier Lippens

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial lift-off and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz corresponding…

THz 2002. 2002 IEEE Tenth International Conference on Terahertz Electronics, Sep 2002, Cambridge, United Kingdom. pp.113-116, ⟨10.1109/THZ.2002.1037604⟩. ⟨hal-02347952⟩

  • Article dans une revue

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 N

E. Monroy, F. Calle, R. Ranchal, T. Palacios, M. Verdu, F Sanchez, M Montojo, M. Eickhoff, Franck Omnès, Z. Bougrioua, I. Moerman

In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1−xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height. Pt/Ti/Au contacts on GaN provide a barrier…

Semiconductor Science and Technology, 2002, 17 (9), pp.L47-L54. ⟨10.1088/0268-1242/17/9/103⟩. ⟨hal-02906516⟩