Publications

• Communication dans un congrès

Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à différentes températures

B. Boudart, Jean-François Llibre, D. Briand, Boubekeur Tala-Ighil, H. Toutah, Yannick Guhel, Jean-Claude de Jaeger, Z. Bougrioua, Marianne Germain, Ingrid Moerman

13es Journées Nationales Microondes, 2003, Lille, France. ⟨hal-01654259⟩

• Chapitre d'ouvrage

Guided wave techniques for optical characterization of lead based ferroelectrics

El Hadj Dogheche, X. Lansiaux, Denis Remiens

REMIENS D. Recent research developments in piezoelectric materials for macro/micro systems, Research Signpost, Kerala, India, pp.211-235, 2003. ⟨hal-00132004⟩

• Article dans une revue

Influence of residual air gaps on the characteristics of circular polarization aperture-coupled millimeter wave microstrip antennas

Ronan Sauleau, Philippe Coquet

Electronics Letters, 2003, 39 (12), pp.889-891. ⟨hal-00549359⟩

• Article dans une revue

Radiation characteristics and performances of millimeter wave horn-fed gaussian beam antennas

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel, T. Matsui

IEEE Transactions on Antennas and Propagation, 2003, 51 (3), pp.378-387. ⟨hal-00549357⟩

• Article dans une revue

Beam focusing using 60-GHz Fabry-Perot resonators with uniform and non-uniform metal grids

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel

Electronics Letters, 2003, 39 (4), pp.341-342. ⟨hal-00549353⟩

• Communication dans un congrès

Conception de dispositifs passifs planaires en bande W

G. Prigent, E. Rius, François Le Pennec, S. Le Maguer, Cédric Quendo, G. Six, H. Happy, Gilles Dambrine

GDR Ondes, 2003, Marseille, France. ⟨hal-00250174⟩

• Communication dans un congrès

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

J. Katcki, J. Ratajczak, A. Laszcz, F. Phillipp, Emmanuel Dubois, Guilhem Larrieu, Julien Penaud, Xavier Baie

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most…

Conference on Microscopy of Semiconducting Materials, Mar 2003, Cambridge, United Kingdom. pp.479-482, ⟨10.1201/9781351074636-110⟩. ⟨hal-00250182⟩

• Communication dans un congrès

Evaluation de la dégradation de béton par ondes ultrasonores haute fréquence

Bogdan Piwakowski, M. Goueygou, S. Ould-Naffa, F. Buyle-Bodin

GDR Ondes, Contrôle non destructif, 2003, Paris, France. ⟨hal-00250186⟩

• Communication dans un congrès

High frequency noise sources extraction in nanometrique MOSFETs

Francois Danneville, G. Pailloncy, Gilles Dambrine

NATO Advanced Research Workshop, Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, 2003, Brno, Czech Republic. ⟨hal-00146038⟩

• Communication dans un congrès

Nondestructive defects detection inside dielectric materials by microwave techniques

M. Maazi, D. Glay, T. Lasri

2003, pp.Session 3A. ⟨hal-00146044⟩